Fuji Electric Co., Ltd.

Kazunaga Onishi

Yoshihiro Kodaira

Rikihiro Maruyama

Yoshikazu Takamiya

Shinji Sano

Hiromichi Gohara

Takeshi Yokoyama

Masayuki Soutome

Masahiro Kikuchi

Masafumi Tezuka

Takashi Masuzawa

Masaki Maruyama

Eiji Mochizuki

Tatsuo Nishizawa

Yoshitaka Nishimura

Shunsuke Saito

Hirohiko Watanabe

Masahiro Ono

Yosuke Miyazawa

Takashi Watanabe

Wan Azha Bin Wan Mat

Takaaki Funakoshi

A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

Semiconductor module, method for manufacturing semiconductor module, and level different jig

Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Assembly jig set and manufacturing method of semiconductor module

A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 &#x3bc;m or less.

A member for semiconductor device includes a metal portion configured to be bonded to another member by solder, and a treated coating covering a surface of the metal portion, the treated coating including a treatment agent. The treated coating vaporizes at a temperature lower than or equal to a solidus temperature of the solder.

Member for semiconductor device

There is provided a method for producing a member for semiconductor device which can reduce generation of a large number of voids in a solder-bonded portion without increasing production cost. The method includes the step of preparing a first member including a metal portion capable of being bonded by solder and the step of coating the surface of the metal portion of the first member with a treatment agent to form a treated coating which vaporizes at a temperature lower than or equal to the solidus temperature of the solder.

Method for producing member for semiconductor device and semiconductor device, and member for semiconductor device

In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn&#x2014;Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %&#x2264;(M&#xd7;C+B)&#xd7;100/(M+B)&#x2264;4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

Lead-free soldering method and soldered article

A semiconductor device having a tubular part is able to prevent the solder from spattering when soldering the tubular part. The semiconductor device has a insulated substrate that has a circuit layer on a front surface thereof, a tubular part that is soldered to the circuit layer, and an external terminal that is inserted into the tubular part and connected electrically to the tubular part. The tubular part has a cylinder portion and a flange portion that is connected to one longitudinal end of the cylinder portion. The flange portion has a first projection, a second projection and a third projection that face the circuit layer. The distance between the first projection and the second projection, the distance between the second projection and the third projection, and the distance between the third projection and the first projection each are greater than the inner diameter of the cylinder portion.

Semiconductor device

An apparatus for a manufacturing semiconductor device including a plate member and a joint member. The apparatus includes a plate-type tool having the plate member mounted thereon, a first fixing tool and a second fixing tool having an inclined surface for abutting an upper edge of an end part in a width direction of plate member. The second fixing tool is fixed onto the plate-type tool adjacent to the end part. An ultrasonic horn applies ultrasonic vibration in the width direction of plate member while pressing the joint member toward the plate member.

Apparatus for manufacturing semiconductor device and the semiconductor device

A method of manufacturing a semiconductor device, includes preparing a molding die for molding a resin case for a semiconductor device, the molding die having protrusions to fix each of a plurality of terminals having a leg portion in a predetermined position; conforming and holding each of the plurality of terminals to the corresponding protrusions in the molding die; and injecting resin into the molding die to integrally mold the plurality of terminals and the resin case.

Semiconductor device manufacturing method

A semiconductor device includes an insulating substrate joined with a semiconductor chip, a case covering a surface of the insulating substrate where the semiconductor chip is joined, and a control terminal in which one end portion is electrically connected to the semiconductor chip, and another end portion passes through the case and is exposed to outside of the case. A portion of the control terminal exposed to the outside of the case includes a cut-out section where a part of the exposed portion is cut out, and a blocking section formed by bending a portion surrounded by the cut-out section and remaining on the control terminal. The blocking section contacts the case from the outside of the case and blocks a movement of the control terminal.

Aspects of the invention are directed to a power module including a metal base, an insulating substrate which is attached to the metal base, a semiconductor chip and a control terminal which are attached to a circuit pattern of the insulating substrate, and a resin case which is attached to the metal base. The control terminal can include a penetration portion which penetrates a cover of the resin case, an L-shaped processed portion which is connected to the penetration portion, and a connection portion which is connected to the L-shaped processed portion. A protrusion portion can be installed in a portion of the control terminal, which penetrates the cover. The protrusion portion can be in contact with a protrusion receiving portion which is configured with a front surface of the cover. The L-shaped processed portion can be in contact with a convex portion in a rear surface of the cover.

In a method of manufacturing a semiconductor device, a molding die for molding a resin case for a semiconductor device is prepared such that the molding die has protrusions to fix each of a plurality of terminals having a leg portion in a predetermined position. Each of the plurality of terminals is held to the corresponding protrusions in the molding die, and resin is injected into the molding die to integrally mold the plurality of terminals and the resin case.

Semiconductor device manufacturing method and semiconductor device

A semiconductor device includes a substrate, an insulating substrate mounted on the substrate, a metal pattern formed on the insulating substrate, an electronic part mounted on the metal pattern across a bond, and a wire member, separate from a wiring wire, which contains a material repellent to the bond and is formed on the metal pattern and around the electronic part.

A soldering method of soldering first and second members includes shooting a laser light to at least one part of an outer peripheral portion surrounding a soldering-target region of the first member thereby to form an oxide film, and bonding the second member with the soldering-target region through a solder. According to the method, the solder resist is never exfoliated even after cleaning with chemicals for removing flux residues contained in solder.

Growing community of inventors

Matsumoto, Japan

Kazunaga Onishi