Toshiba Ceramics Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Kazumoto Homma

Shin'ichiro Takasu

Eiichi Toji

Michihiro Ohwa

Kazuhiko Kashima

Masaharu Watanabe

A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.

Neutron transmutation doping of a silicon wafer

A device for growing single cristals comprising a pair of electromagnetic coils disposed opposed to each other in a symmetry with respect to a central axis of a crucible at an outer side of a heater, an effective average radius of said coil being from 1.5 to 5 times of a radius of said crucible.

Method of and device for growing single crystals

A device for growing single crystals comprising a pair of electromagnetic coils disposed opposed to each other in a symmetry with respect to a central axis of a crucible at an outer side of a heater, a diameter for said coils being greater than 0.8 times of a diameter for said heater and a distance between said coils being greater than 1.5 times of said diameter for said heater.

Device for growing single crystals

A method of producing a semiconductor device comprising a semiconductor substrate exhibiting defect density of 10.sup.5 /cm.sup.2 or more when the central portion of the substrate is observed through an optical microscope after the substrate is heat-treated at 1,050.degree. C. for 18 hours and etched along a section thereof across the thickness thereof.

Growing community of inventors

Sagamihara, Japan

Kazumoto Homma