Tdk Corporation

Nihon Denshi Kabushiki Kaisha

Other

Jeol Ltd.

Kazumitsu Tanaka

Yukio Kawaguchi

Akira Sato

Shigeru Shoji

Toshikazu Tanishima

Masahiro Itoh

Atsushi Hitomi

Katsuyuki Kurachi

Eiichi Goto

Masanori Idesawa

Susumu Takashima

Tsutomu Koyanagi

Takao Matsumoto

Nobuo Goto

Takashi Souma

Kenichi Jinguji

Junji Abe

A ferrite substrate for thin-film inductors is provided by means of blending raw materials to meet a composition of di-iron trioxide (FeO): 40 to 55 mol %, nickel oxide (NiO): 5 to 35 mol %, zinc oxide (ZnO): 10 to 40 mol %, and bismuth trioxide (BiO): 150 to 750 ppm, or of FeO: 40 to 55 mol %, NiO: 5 to 35 mol %, ZnO: 10 to 40 mol %, cupric oxide (CuO): 5 to 10 mol %, and manganese dioxide (MnO): 0.5 to 2 mol %, and then molding and sintering the blended material, and applying hot isostatic pressing to the sintered article. A thin-film common mode filter and a thin-film common mode filter array using the ferrite substrate and the manufacturing method of the substrate are also provided.

Ferrite substrate for thin-film inductors, thin-film common mode filter using the substrate, and thin-film common mode filter array using the substrate

Ferrite substrate, thin-film common mode filter using the substrate, thin-film common mode filter array using the substrate and manufacturing method of the substrate

A flat panel display spacer has a sintered body containing A1O, TiC, MgO, and TiO, whereas the sintered body includes 35 to 55 wt % of MgO with respect to the total weight of A1O, TiC, MgO, and TiO.

Flat panel display spacer, method of manufacturing flat panel display spacer, and flat panel display

An electron beam lithography system capable of forming an aperture image on a material to be patterned in such a way that the current density distribution throughout the whole image is uniform, the current density is high, and the resolution is high. The system has an electron gun comprising a plurality of needle-like cathodes arranged in an array forming field emission electron sources. Electrons are extracted from the cathodes.

Electron beam lithography system

A reference mark, common to both an electron beam and a workpiece, is arranged above and away from, but in the vicinity of, the workpiece exposure area. The position of the workpiece with respect to the reference mark is ascertained by an optical measuring means such as a Michelson type laser interferometer and the position of the electron beam with respect to the reference mark is ascertained by scanning the electron beam over said reference mark. The relative positions of the electron beam and the exposed workpiece is obtained by comparing the respective positions of the electron beam and workpiece with the reference mark. By so doing, the error between specified and actual positions of the points of impingement of the electron beam on the surface of the workpiece may be corrected.

Electron beam exposure system

An electron beam with a cross-section shaped by two aperture plates and a deflector sequentially irradiates pattern areas within a plurality of unit squares on a workpiece in the X and Y directions. The workpiece is continuously shifted in the Y direction by a mechanical means, the amount of workpiece shift being detected to control the deflector and the shaping of said beam cross-section.

Growing community of inventors

Tokyo, Japan

Kazumitsu Tanaka