Shinko Electric Industries Co., Ltd.

Panasonic Corporation

Kazumitsu Seki

Muneaki Kure

Takashi Yoshie

Harunobu Sato

Yoshihito Miyahara

Seishi Oida

Takahiro Nakano

Akemi Nozaki

Yoshito Miyahara

Harunobu Satou

Kouichi Kadosaki

Koichi Kadosaki

A lead frame includes a lead frame bodyhaving a die padto which a semiconductor chipis bonded and a plurality of leadsarranged around the die padand made of Cu or an alloy containing Cu, and a metallic film formed on the lead frame bodyand to connected to a metallic wireconnected to the electrode padof the semiconductor chip. The metallic film is an Ag-plated filmwith nanoparticlesarranged in gapsamong Ag crystal grains

Lead frame, method for manufacturing the same and semiconductor device

A lead frame base is coated with a four-layer plating. The four-layer plating includes an underlayer plating (Ni), a palladium plating, a silver plating and a gold plating arranged in this order from bottom to top.

Lead frame having outer leads coated with a four layer plating

A conductor substrate for mounting a semiconductor element, at least a portion thereof mounting the semiconductor element being sealed with an insulating resin, wherein an uppermost surface layer of the conductor substrate comprises copper or an alloy thereof, and the conductor substrate is partly or entirely covered with a layer of copper oxide containing a hydroxide formed upon the surface treatment of the conductor substrate and a process of producing the conductor substrate as well as a process for the production of a semiconductor device using the conductor substrate.

Conductor substrate, semiconductor device and production method thereof

A lead frame for semiconductor device is provided with an inner lead part and an outer lead part. A composite plating layer is provided on the entire plane of a base material constituting the lead frame or at least on the outer lead part. The composite plating layer includes a base layer composed of an Ni-based plating layer formed on the entire plane of the base material constituting the lead frame or at least on the outer lead part, a Pd or Pd alloy plating layer formed on an upper plane of the base layer with a thickness of 0.005-0.01 &#x3bc;m, and an Au plating layer formed on an upper plane of the Pd or Pd alloy plating layer with a thickness of 0.02-0.1 &#x3bc;m. The lead frame for semiconductor device has a Pd-PPF structure. In the case of mounting a semiconductor device on a board and the like with a lead-free Sn&#x2014;Zn based solder or other lead-free solders by using the lead frame, wettability of the lead frame with the lead-free Sn&#x2014;Zn based solder or other lead-free solders is improved and mountability of the semiconductor device can be improved.

Lead frame for semiconductor device

A leadframe for a semiconductor device of the present invention is a leadframe for a semiconductor device having a stage section where a semiconductor chip is to be mounted, an inner lead section connected to the stage section, and an outer lead section connected to the inner lead section. The leadframe has (1) a nickel (Ni) layer, (2) a palladium (Pd) or palladium alloy layer, (3) a tin (Sn) or tin alloy layer or a zinc (Zn) or zinc alloy layer, or, and (4) a gold (Au) layer, or, all of which are formed on a base material B forming the leadframe in sequence from the surface of the leadframe.

Leadframe for semiconductor device

A packaging component used for constituting a package mounting a semiconductor element, and a semiconductor package using the packaging component. The packaging component has on at least a portion of the surface thereof a covered surface which is sealed with an insulating resin or on which an adhesive layer is applied, and the packaging component comprises a conductor substrate and an electrically conducting layer partly or entirely covering the surface thereof, and the electrically conducting layer comprises a rough-surface plated layer having a roughened surface profile on the covered surface. The packaging component includes, for example, a lead frame and a heat-radiating or heat-dissipating plate.

Packaging component and semiconductor package

A semiconductor device lead frame made of copper or a copper alloy used for a resin sealing type semiconductor device, comprising a lead frame body made of copper or a copper alloy, a double-layer under plating film formed on the lead frame body and comprising a lower layer made of zinc or a copper-zinc alloy and an upper layer made of copper having a thickness of 0.02 to 0.4 &mgr;m and a precious metal plating film formed on at least a wire bonding portion of an inner lead of the copper upper layer of the under plating film. This lead frame is excellent in adhesion with a sealing resin, is free from contaminate a precious metal plating solution (particularly a silver plating solution), has a good appearance of the precious metal plating film, is excellent in corrosion resistance and moisture resistance, and has a good appearance and adhesion of an external solder plating film.

Growing community of inventors

Nagano, Japan

Kazumitsu Seki