Hitachi, Ltd.

Kazumitsu Nakamura

Hiroyuki Ito

Hiroyuki Itoh

Shinichi Kato

Masaru Miyazaki

Yoshio Sakitani

Yoshihisa Minamikawa

Hajime Hayakawa

Hideyuki Kakiuchi

Akira Yanagisawa

Yukio Yoshinari

A charged particle beam projection aligner comprising a particle beam source for irradiating a particle beam, a sectional shape forming device thereof, an electron lens and a deflector, a wafer mounted on a XY table and a vacuum column in which these devices are installed, further comprising an optical device which irradiates a light beam in the same direction as an irradiating direction of the particle beam, a detector for detecting a light beam reflected from alignment marks on the wafer by irradiating the light beam, and for detecting a reflected light beam and a reflected electron beam reflected from a fiducial mark on the XY table by irradiating the light beam and the particle beam, and a computer for memorizing lithographic patterns, correcting said lithographic patterns with signals from the detector and outputting the corrected lithographic patterns to the electron lens and the deflector so as to control them. Since the light beam is irradiated on the wafer in the same direction as the direction of the particle beam, an offset error of the pattern alignment is minimized.

Charged particle beam projection aligner having position detector using

An electron beam lithography apparatus comprising an upper aperture, a lower aperture, a deflector disposed between the upper aperture and the lower aperture, an optical lens for converging the electron beam passed through the lower aperture onto a specimen, and means for measuring an electron reflected from a position mark installed on a stage when the electron beam scans the position mark, calculating a correction value of the section and the measured reflectional electron and controlling the deflector according to the correction value. As the shapes of the electron beam are corrected by detecting the reflectional electron from the position mark and measuring the positional error of the sectional shape of the electron beam corresponding to the set sectional shapes, the sectional shapes are corrected in high accuracy.

Electron beam lithography apparatus having device for correcting beam

An electron beam measuring apparatus for measuring size of pattern on surface of a specimen comprising, an electron gun, an electron lens for focusing the electron beam from the electron gun on the specimen surface, a deflector for deflecting the electron beam, a spot control means for forming a flat edge portion in the electron beam spot, a rotation coil for rotating the electron beam so that the flat portion of the electron beam spot becomes to be perpendicular to the scanning direction of the electron beam, a detecting means for detecting secondary electrons reflected from the specimen surface, and a computer for calculating the size of the pattern based on the secondary electrons from the detecting means. As the flat portion of the electron beam spot is perpendicular to the scanning direction, the size of pattern is measured with high accuracy.

Electron beam measuring apparatus

An electron beam lithography apparatus having an external magnetic field correcting device comprises an electron gun for irradiating an electron beam onto a semiconductor wafer, a electron beam column made from a high magnetic permeability material disposed around the electron beam, a coil equipped on the electron beam column, a magnetic sensor for detecting an external magnetic field which is disposed at the outside of the electron beam column, a stage for mounting and moving the semiconductor wafer, a position detecting means for detecting the position mark on the stage, a correcting device for generating a correcting signal based on the outputs from the magnetic sensor and the position detecting means, and a current adjusting device for adjusting a correcting current flown into the coil according to the correcting signal from the correcting device so as to compensate a rotational deviation of the electron beam caused by the external magnetic field. The electron beam lithography apparatus is obtained at a low cost and results in high positioning accuracy without requiring a covering of a high magnetic permeability material around the electron beam lithography apparatus.

Electron beam lithography apparatus having external magnetic field

The invention relates to an electron beam drawing method by a matching mark detecting method for use in manufacturing of semiconductor devices. First, the surface of a semiconductor wafer is divided into a number of blocks. Each block is divided into a number of chips. Four matching marks are formed at four corners of the block. Next, the matching marks are detected by an electron beam. When the electron beam deflecting system is corrected on the basis of the position information of the detected matching marks, different correcting equations are used in correspondence to the number of matching marks detected.

Electron beam drawing method

An electron beam lithographic method for describing a fine pattern on the surface of a semiconductor specimen by irradiating the surface of the specimen with an electron beam. The electron beam generated by an electron gun is converged onto a specimen through electron lenses. When a step of lithography has been finished, the electron beam is blanked by a shaping deflector that shapes the electron beam and that is disposed between a first shaping iris and a second shaping iris, so that the specimen is not damaged by the reflected electron beam or by the scattered electrons.

Electron beam lithographic method

With the invention an electron beam scans reference marks formed on a sample so as to determine the positions of the reference marks. The sample is scanned by the electron beam with respect to the positions of the reference marks thereby to form a desired pattern on the sample. The accelerating voltage for the electron beam is changed to a lower value upon scanning the sample for generation of a pattern than upon scanning the reference marks.

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Katsuta, Japan

Kazumitsu Nakamura