Hitachi, Ltd.

Kazumichi Sakamoto

Toshio Miyamoto

Hiroshi Kondoh

Tomio Yamada

Eiichi Hase

Tooru Fujioka

Isao Arai

A semiconductor integrated circuit device is provided for high-frequency or high-speed circuitry having stabilized characteristics and reduced influence on surrounding devices. In the device structure, ground leads extending from a metal substrate or metal layer for mounting ICs for high-frequency or high-speed circuitry are disposed adjacent to at least one side of signal leads and a width W or a space S of at least a part of the leads are set to inherent values for reducing the inductance of ground leads. Further, passive circuit chips for short-circuiting or blocking a high frequency signal are mounted on the metal substrate to suppress high-frequency component signals flowing through power supply leads and ground leads. According to the structure, a high-frequency potential difference due to the inductance of the ground and power supply leads is suppressed and RF energy is confined within the semiconductor integrated circuit device, so that deterioration of the characteristics of the high-frequency or high-speed ICs can be reduced and leakage of the RF signal to the outside of the semiconductor integrated circuit device can be prevented to avoid influence on surrounding devices.

Growing community of inventors

Yokohama, Japan

Kazumichi Sakamoto