Nec Corporation

Kazumi Yamaguchi

Takao Arai

Manabu Yamada

Masami Sawada

Keizo Hagimoto

A semiconductor device has a vertical MOS FET and a trigger element connected between the drain and the gate of the MOS FET. The trigger element has a heavily doped n region, a lightly doped p region and a lightly doped n region. The trigger element has a breakdown voltage lower than the drain-to-source rated voltage of the MOS FET and exhibits a negative resistance characteristic. A surge voltage enterring the drain of the MOS FET raises the gate potential of the MOS FET by flowing through the trigger element to thereby trigger the source-drain path of the MOS FET. The negative resistance characteristic of the trigger element enables to lower the temperature rise of the MOS FET to thereby protect the MOS FET against thermal destruction. A bidirectional diode set may be connected in series to the trigger element to design various breakdown voltage of the protective path.

Semiconductor device including a protective element having negative

The invention has the object of realizing a semiconductor device in which the various problems brought about by parasitic diodes in configuring a circuit are prevented, the semiconductor device being provided with first and second insulated-gate field-effect transistors, and being configured such that the source regions of the first and second insulation gate field-effect transistors are electrically connected, the back gate region, which in part constitutes a channel, and the source region of the first insulated-gate field-effect transistor are electrically connected, and the back gate region of the second insulated-gate field-effect transistor is electrically connected to the drain region of the first insulated-gate field-effect transistor.

IGFET circuit preventing parasitic diode current

A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.

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Tokyo, Japan

Kazumi Yamaguchi