Kyoto University

Other

Shimadzu Coproation

Daikin Industries, Ltd.

Kazumi Matsushige

Atsushi Yamaguchi

Meiten Koh

Kenichiro Suetsugu

Arifumi Matsumoto

Kei Kobayashi

Kenjiro Kimura

Tetsuhiro Kodani

Hirofumi Yamada

Nobuo Satoh

Masato Hirano

Masahiro Ohta

Shunji Hibino

Noriaki Oyabu

Takashi Horiuchi

Akifumi Nakai

Eika Tsunemi

Shinichiro Ido

Takashi Ikari

Toshihisa Horiuchi

Kenji Ishida

Shuichiro Kuwajima

A probe needle is successively moved to a plurality of measurement points set in a measurement region on a sample so as to measure a z-displacement amount. An excitation control unit feedback-controls a piezoelectric element so that a vibration amplitude of a cantilever is constant in accordance with the detection output by a displacement detection unit. Moreover, a vertical displacement control unit feedback-controls a vertical position scan unit so as to obtain a constant distance between the probe needle and the sample according to a frequency shift by a frequency detection unit. When changes of outputs of two feedback loops at a certain measurement point are both within a predetermined range, a main control unit issues an instruction to a horizontal position control unit to rapidly move to the next measurement point. As a result, it is possible to adaptively decide such a measurement time that both of the two feedback controls at respective measurement points are established. This eliminates an unnecessary measurement time, which in turn reduces the time required for creating one convex/concave image as compared to the conventional technique and improves the throughput.

Scan device for microscope measurement instrument

Above a sample () having magnetic domains, a distribution of magnetic force in a measurement plane () is obtained as a magnetic force image using a MFM, an auxiliary magnetic force image is obtained by performing measurement in a measurement plane () away from the measurement plane () by a distance d, and a difference between them is divided by the distance d to obtain a magnetic force gradient image. The magnetic force image and the auxiliary magnetic force image are Fourier transformed and substituted into a three-dimensional field obtaining equation derived from a general solution of the Laplace equation, and the three-dimensional field indicating the magnetic force is obtained. A state of the magnetic domains at the surface () of the sample () can be obtained with high accuracy by obtaining the three-dimensional field.

Apparatus and method of obtaining field by measurement

Incident lightemitted from a laser light sourceis reflected on an upper surface of a cantilever, so that reflected lightenters light detection means. Since the incident lightand the reflected lightare in a plane not including a long axis of the cantilever, movements of the reflected lightdue to change in a deflection amount &#x3b8; of the cantileverand due to change in a fine vertical movement amount z thereof are different in direction on the light detection means. This enables the change in the deflection amount &#x3b8; of the cantileverand the change in the fine vertical movement amount z thereof to be separated from output of the light detection means

Method for processing output of scanning type probe microscope, and scanning type probe microscope

An electron beam irradiation device of the present invention includes: a projectorfor generating a two-dimensional light pattern; a microchannel platefor (i) generating an electron beam array based on the light patternhaving entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array; and an electron beam lens sectionfor converging the amplified electron beam array. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Electron beam irradiation device

A method of detecting the distribution of values of a physical property such as the dopant concentration of a semiconductor without being adversely affected by stray capacitance is offered. A scanning probe microscope capable of implementing this method is also offered. The method starts with applying an AC voltage of angular frequency &ohgr; between a probe and a sample from a fixed oscillator. The output from the oscillator is supplied to a piezoelectric device that drives the cantilever. The cantilever produces a deflection signal corresponding to forces corresponding to interactions between the probe and sample. A signal regarding the amplitude is extracted from the deflection signal. This signal is fed back to a means for controlling the distance between the probe and sample and supplied to a display device. As a result, an image of the surface topography of the sample is obtained. A harmonic component having a frequency higher than the triple or more of the angular frequency &ohgr; and contained in the cantilever deflection signal is extracted by a lock-in amplifier. As a result, information representing an image of differential capacitance (&part;C/&part;V) is obtained.

Method and apparatus for measuring values of physical property

There are provided a method of soldering a lead-free solder which lowers a melting point of the lead-free solder and prevents deterioration of a joining strength at a portion joined by the lead-free solder, and a joined object soldered with the use of the soldering method. The lead-free solder as an alloy of tin with no lead contained is melted, and ultrasonic vibration is acted at least either to the join object to be joined by the lead-free solder or to the lead-free solder when the molten lead-free solder is solidified. Therefore crystals of contained components in the lead-free solder are made fine and the contained components are prevented from being segregated at a joining interface of the joined object, so that the joining strength at the joining interface can be increased.

Method of soldering using lead-free solder and bonded article prepared through soldering by the method

Growing community of inventors

Kyoto, Japan

Kazumi Matsushige