Tokyo Electron Limited

Kazumi Kubo

Yutaka Takahashi

Hitoshi Kato

Hiroshi Shinriki

Takayuki Karakawa

Mitsuhiro Okada

Atsushi Endo

Akinobu Kakimoto

Tsuyoshi Takahashi

Masahiko Kaminishi

A film forming method includes causing adsorption of a source gas on a substrate surface having a convex portion, and forming a film on the substrate surface using a thermal reaction between the adsorbed source gas and a reactive gas. The substrate is disposed on a surface of a turntable provided inside a vacuum chamber. An adsorption region in which the causing is performed, and a reaction region in which the forming is performed, are provided inside the vacuum chamber above the turntable along a circumferential direction of the turntable. The causing and the forming are repeated with respect to the substrate by rotating the turntable in a state where the source and reactive gases are supplied to the adsorption and reaction regions, respectively. At least one of the source gas supply and the reactive gas supply supplies the gas at an angle with respect to a vertically downward direction.

Method for forming film on substrate surface having convex portion

A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.

Deposition method

A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.

Film deposition method

A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.

A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.

Method for depositing a silicon nitride film and film deposition apparatus

A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.

A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.

A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.

Film deposition method of depositing film and film deposition apparatus

A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.

Method and apparatus for forming oxide film on carbon film

A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.

Film formation method and apparatus for semiconductor process

In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.

A method of forming a dielectric film by an organic metal CVD method, comprising the step of supplying an organic metal compound into a treating container having a substrate to be treated held therein to form the dielectric film on the substrate, wherein the dielectric film forming step comprises the first step of depositing, in the treating container, the dielectric film under a first condition so set as to allow the residence time of the organic metal compound to extend to a first value, and the second step of further depositing, after the first step and in the treating container, the dielectric film under a second condition so set as to allow the residence time of the organic metal compound to extend to a second value smaller than the first value.

Method of forming dielectric film

A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.

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Iwate, Japan

Kazumi Kubo