Nippon Telegraph and Telephone Corporation

Hitachi, Ltd.

Kazumi Iwadate

Katsuhiro Harada

Masahide Okumura

Norio Saitou

Susumu Ozasa

Mitsuo Ooyama

Tsutomu Komoda

Tadahito Matsuda

Genya Matsuoka

Takashi Matsuzaka

Minpei Fujinami

Ryoichi Yamaguchi

A highly sensitive positive resist mixture which comprises a resist having a carboxyl group at the side chain and which is decomposable by high energy rays constituted by a polymer having the formula I ##STR1## where R.sub.1, R.sub.2, . . . R.sub.n represent alkyl groups, halogenated alkyl groups, or aryl groups having five or fewer carbon atoms, or --COORa or --CORb (where Ra and Rb are alkyl groups or halogenated alkyl or aryl groups having five or fewer carbon atoms), and when ##EQU1## m.sub.c /M is in the range of 0.01 to 1.0 and m.sub.1 /M, m.sub.2 /M, . . . m.sub.n /M are respectively in the range of 0.99 to 0, and an additive selected from the group consisting of oxides, halides and organic acid salts of bivalent metals.

Highly sensitive positive resist mixture

A mark position detection system used in a charged particle beam apparatus and including detection circuit for detecting a reflected electron generated at a mark when the mark is scanned with a charged particle beam, to obtain a mark signal, and signal processing circuit for comparing the mark signal from the detection circuit with a predetermined threshold level to find the position of the charged particle beam at a time the mark signal traverses the threshold level, thereby detecting the position of a mark edge, is disclosed in which, when the mark signal traverses the threshold level and has a peak value exceeding a predetermined value, it is determined by the signal processing circuit that the position of the charged particle beam at a time point at which the mark signal traverses the threshold level is the position of the mark.

Mark position detection system for use in charged particle beam apparatus

Patterning method

An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.

Electron beam lithography apparatus

Growing community of inventors

Higashimurayama, Japan

Kazumi Iwadate