Sumitomo Chemical Company, Limited

Kazumasa Ueda

Kenji Kasahara

Masahiko Hata

Yoshinobu Ono

Kenji Kohiro

Yoshiaki Takeuchi

Sadanori Yamanaka

Tomoyuki Takada

Masayuki Takashima

Yoshiaki Sakatani

Yoshihiko Tsuchida

Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0&#xd7;10.

Method for producing compound semiconductor epitaxial substrate having PN junction

A method for producing a group 3-5 nitride semiconductor includes the steps of (i), (ii), (iii) in this order: (i) placing inorganic particles on a substrate, (ii) epitaxially growing a semiconductor layer by using the inorganic particles as a mask, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light; and a method for producing a light emitting device further includes adding electrodes.

Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device

A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).Lm Lm&#x3e;Ls&#x3e;Lc&#x2003;&#x2003;(2a)

Compound semiconductor epitaxial substrate and process for producing the same

The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5&#xd7;10cmto 5&#xd7;10cmin this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

Group III nitride semiconductor light emitting device and method for producing the same

The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (&#x3b8;, &#x3c6;) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction &#x3c6; and is substantially represented by I (&#x3b8;, &#x3c6;)=I (&#x3b8;). I (&#x3b8;, &#x3c6;) represents a light intensity distribution in a direction (&#x3b8;, &#x3c6;), &#x3b8; represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0&#x2266;&#x3b8;&#x2266;90&#xb0;), &#x3c6; represents a rotation angle around the normal (0&#x2266;&#x3c6;&#x2266;360&#xb0;), and I (&#x3b8;) represents a monotone decreasing function with which 0 is approached when &#x3b8;=90&#xb0; is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body.

Light emitting device having a monotone decreasing function

The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 &#x3bc;m and a bottom base diameter of from 0.05 to 2.0 &#x3bc;m; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 &#x3bc;m and a base diameter of from 0.05 to 2.0 &#x3bc;m. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 &#x3bc;m and a surface density of 2&#xd7;10to 2&#xd7;10cm, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.

Semiconductor light emitting device and method for manufacturing the same

The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.

Method for fine processing of substrate, method for fabrication of substrate, and light emitting device

A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconductor substrate having pn junction, including an epitaxial growing process, a selective growing process and other discretionary processes after the epitaxial growing process. The highest temperatures in the selective growing process and other discretionary processes after the epitaxial growing process are lower than that in the epitaxial growing process prior to the selective growing process.

Method for manufacturing compound semiconductor substrate with pn junction

An abrasive for metal having particle that have a functional group capable of trapping a metal ion, a process for producing the abrasive, and a polishing composition having the abrasive, an oxidizing agent and water, are provided.

Abrasive for metal

An abrasive composition is provided comprising an oxidizing agent and abrasive particles which have a mean particle size of 2 .mu.m or less, wherein each of the abrasive particles comprises (i) at least one oxide selected from aluminum oxide and silicon oxide and (ii) cerium oxide in an amount of 5% to 40% by weight in terms of cerium based on the oxide (i). A method for polishing and planarizing a metal layer formed on a semiconductor substrate using the abrasive composition is also provided.

Abrasive composition and use of the same

Disclosed is an abrasive particle having an average particle size of not more than 2 .mu.m and comprising 100 parts by weight of aluminum oxide and/or silicon oxide and 5 to 25 parts by weight of cerium in the form of cerium oxide. A method for producing the same, and a method for planarizing an insulating film on a semiconductor substrate using the abrasive particles are also disclosed.

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Tsuchiura, Japan

Kazumasa Ueda