Rohm Co., Ltd.

Kabushiki Kaisha Toshiba

Renesas Technology Corp.

Sanyo Electric Co., Ltd.

Toshiba Memory Corporation

Other

Mitsubishi Denki Kabushiki Kaisha

Kazumasa Tanida

Osamu Miyata

Yoshihiko Nemoto

Kenji Takahashi

Mitsuo Umemoto

Masahiro Sekiguchi

Hideo Numata

Satoshi Hongo

Chiaki Takubo

Mie Matsuo

Naoko Yamaguchi

Atsuko Kawasaki

Tsuyoshi Matsumura

Susumu Harada

Takashi Shirono

Naotaka Tanaka

Yukiharu Akiyama

Hiroaki Ashidate

Masayuki Dohi

Akihiro Hori

Takamitsu Yoshida

Hiroshi Yoshikawa

Yoshio Okayama

Ikuko Inoue

Hitoshi Sugiyama

Tadahiro Morifuji

Kazutaka Akiyama

Eiji Takano

Yoshihisa Imori

Atsuko Yamashita

Hideko Mukaida

Ninao Sato

Gen Toyota

Mari Otsuka

Hiroshi Terao

Masayuki Ayabe

Kuniaki Utsumi

Shouta Inoue

Susumu Yamamoto

Takamasa Tanaka

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

Semiconductor device with a semiconductor chip connected in a flip chip manner

A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.

Semiconductor device having gaps within the conductive parts

According to one embodiment, a method of manufacturing a semiconductor device includes a step of grinding to thin a first semiconductor wafer on which a semiconductor device is formed in a state in which a surface of a second semiconductor wafer is fixed on a chuck table of a grinding device after bonding the first semiconductor wafer to the second semiconductor wafer. The method includes a step of fixing a surface of the first semiconductor wafer on the chuck table and grinding the surface of the second semiconductor wafer in a state in which the first semiconductor wafer is bonded to the second semiconductor wafer prior to the grinding step to thin the first semiconductor wafer.

Method of manufacturing semiconductor device

According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device () includes a solid state device (), a semiconductor chip () that has a functional surface () on which a functional element () is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film () that is provided on the surface () of the solid state device facing the semiconductor chip and that has an opening () greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer () that seals a space between the solid state device and the semiconductor chip.

A semiconductor device includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.

Semiconductor device having a low-adhesive bond substrate pair

A solid state imaging device includes a semiconductor layer, and a light shielding portion. The semiconductor layer has multiple photoelectric conversion elements. The light shielding portion is provided in the semiconductor layer, and has a light shielding member whose interface with the semiconductor layer is covered by an insulating film. The light shielding portion includes a light shielding region and an element isolation region. The light shielding region is provided in the semiconductor layer on the side close to the light receiving surface of the photoelectric conversion element for shielding light incident on the photoelectric conversion element from a specific direction. The element isolation region is formed to project in the depth direction of the semiconductor layer from the light shielding region toward a portion between the multiple photoelectric conversion elements in order to electrically and optically isolate the multiple photoelectric conversion elements from one another.

Solid state imaging device

According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

System and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

Semiconductor device and manufacturing method of semiconductor device

According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

Growing community of inventors

Chiba, Japan

Kazumasa Tanida