Sharp Kabushiki Kaisha Corporation

Kazumasa Mitsumune

Yushi Inoue

Tsukasa Doi

Takanori Sonoda

Kenichiroh Abe

It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of &#x2267;3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N&#x2014;H bond density of the silicon nitride film is 1.0&#xd7;10pieces/cmor less. According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.

Method for forming interlayer insulation film

A semiconductor chip is encapsulated with resin into a plastic package so as to form a semiconductor device having the semiconductor chip in the plastic package. The semiconductor device is then received in a container so that the container is vacuumed up to a vacuum degree of 10 or less. Thereafter, the semiconductor device is baked at a temperature within a range of 165&deg; C. to 175&deg; C. for 6 hours or more by using a hot plate. Thus, this baking under the reduced pressure prevents generation of blisters and cracks on the plastic package.

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Kurashiki, Japan

Kazumasa Mitsumune