Mitsubishi Chemical Corporation

Tohoku University

Kazumasa Kiyomi

Kenji Shimoyama

Satoru Nagao

Hideki Gotoh

Nobuyuki Hosoi

Yoshihito Sato

Kenji Fujito

Katsushi Fujii

Hirobumi Nagaoka

Makiko Hashimoto

Hirotaka Oota

Hiroyuki Shibata

Yoshio Waseda

Satosi Kikuchi

Isao Fujimura

The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device

The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device

A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0&#x3c;=x&#x3c;=1, 0&#x3c;=y&#x3c;1, 0&#x3c;z&#x3c;=1, 0&#x3c;s&#x3c;=1 and 0&#x3c;=t&#x3c;1) on a substrate

Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G) containing Hgas, GaCl gas (G), and NHgas (G) to a reaction chamber (), and setting the growth temperature at 900 (&#xb0; C.) (inclusive) to 1,200 (&#xb0; C.) (inclusive), the growth pressure at 8.08&#xd7;10(Pa) (inclusive) to 1.21&#xd7;10(Pa) (inclusive), the partial pressure of the GaCl gas (G) at 1.0&#xd7;10(Pa) (inclusive) to 1.0&#xd7;10(Pa) (inclusive), and the partial pressure of the NHgas (G) at 9.1&#xd7;10(Pa) (inclusive) to 2.0&#xd7;10(Pa) (inclusive).

Gallium nitride-based material and method of manufacturing the same

This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (W ) at an opening center of the stripe-shaped opening is different from either or both of a width (W ) of the opening front end and a width (W ) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

Semiconductor optical device apparatus

The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Semiconductor device and method for manufacturing the same

In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Growing community of inventors

Ushiku, Japan

Kazumasa Kiyomi