Az Electronic Materials (luxembourg) S.a.r.l.

Merck Patent Gmbh

Az Electronic Materials USA Corp.

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Kazuma Yamamoto

Tatsuro Nagahara

Takashi Sekito

Shigemasa Nakasugi

Masahiro Ishii

Maki Ishii

Tomoyasu Yashima

Munirathna Padmanaban

Takeshi Kamiya

Srinivasan Chakrapani

Go Noya

Masakazu Kobayashi

Hiroshi Yanagita

Yuriko Matsuura

Yasushi Akiyama

Masato Fujita

Shinji Miyazaki

Noboru Satake

Yoshihiro Miyamoto

[Problem] To provide a semiconductor aqueous composition capable of preventing a pattern collapse and suppressing a bridge defect. [Means for Solution] A semiconductor aqueous composition comprising a single or plurality of surfactant(s) having a monovalent anion part represented by formula (I): Chain 1-X—X-Chain 2 (I) wherein, Xand Xare each independently —C(=0)- or —S(=0)-, and Chain 1 and Chain 2 are each independently a linear or branched Calkyl, wherein one or more H in said Calkyl are replaced by F, and one or more methylenes in Chain 1 may be replaced by -0-, with the proviso that Chain 1 and Chain 2 may be bonded to form a ring structure) and a monovalent cation part other than hydrogen ion; and water.

Semiconductor aqueous composition and use of the same

A fluorinated imide salt compound of the present invention is a compound represented by General Formula (1). In General Formula (1), m represents 1 or 2, n represents an integer from 1 to 4, &#x3b1; represents 1 or 2, and Xrepresents an &#x3b1;-valent metal ion, a primary ammonium ion, a secondary ammonium ion, a tertiary ammonium ion, a quaternary ammonium ion, or NH. 

Fluorinated imide salt compound and surfactant

The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.

Lithography composition, a method for forming resist patterns and a method for making semiconductor devices

The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.

Rinse composition, a method for forming resist patterns and a method for making semiconductor devices

[Problem] To provide a composition capable of improving surface roughness of resist patterns, and also to provide a pattern formation method employing the composition. [Solution] The present invention provides a composition containing a particular nitrogen-containing compound, an anionic surfactant having a sulfo group, and water; and also provides a pattern formation method containing a step of applying the composition to a resist pattern beforehand developed and dried.

Composition for resist patterning and method for forming pattern using same

The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.

Fine resist pattern-forming composition and pattern forming method using same

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.

Composition for forming fine resist pattern, and pattern formation method using same

The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Composition for forming fine resist pattern and pattern formation method using same

The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.

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Kakegawa, Japan

Kazuma Yamamoto