Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Kazuma Tanii

Yuji Kasai

Hiroyuki Saito

Hajime Kawano

Daisuke Sato

Seiichiro Kanno

Masakazu Takahashi

Katsuhiro Sasada

Go Miya

Takafumi Miwa

Keiichiro Hitomi

Eiichi Seya

Hitomi Sakai

Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

Charged particle beam device

Provided are a charged particle beam device and a charged particle beam adjustment method capable of observing or inspecting a change in observation conditions in a more appropriate beam state while preventing an increase in a time required for each measurement point. The charged particle beam device includes a condenser lensand an objective lensconfigured to focus an electron beamemitted from an electron source, a primary beam scanning deflectoror a secondary electron deflector, an adjusting elementconfigured to adjust an axis of the electron beam, and a control deviceconfigured to supply a signal representing a control amount to the adjusting elementfor control. The control deviceis configured to determine the control amount by using a change amount of an intensity of the condenser lens, the objective lens, the primary beam scanning deflector, or the secondary electron deflector, and a calculation formula or a table showing a relation between the change amount of the intensity and the control amount.

Charged particle beam device and charged particle beam adjustment method

Foreign substances present in a sample chamber are attached to or drawn close to an objective lens and an electrode disposed close to the objective lens by applying a higher magnetic field than when normally used to the objective lens and applying a higher electric field than when normally used to the electrode disposed close to the objective lens. A stage is moved such that the center of an optical axis is located directly above a dedicated stand capable of applying voltage, the magnetic field of the objective lens is turned off, and then the potential difference between the electrode disposed close to the objective lens and an electrode disposed close to the sage is periodically maximized and minimized to thereby forcibly drop the foreign substances onto the dedicated stand capable of applying voltage.

Method for removing foreign substances in charged particle beam device, and charged particle beam device

Disclosed is a scanning electron microscope capable of performing speedy focusing by automatically measuring an electrostatic voltage of a surface of a wafer inside a specimen chamber in an accurate, and easy speedy manner, the wafer assuming different electrostatic voltages inside and outside the specimen chamber. The scanning electron microscope that controls optical systems measures an electrostatic voltage of the specimen according to an electrostatic capacitance between the both parts of the divided electrode plate, by dividing an electrode plate into two parts and switching potentials of electrodes obtained by the division with each other, an electrostatic voltage of the specimen based on an electrostatic capacitance between the both parts of the divided electrode plate. The electrode plate is used for applying a retarding voltage and arranged over a specimen.

Scanning electron microscope

Growing community of inventors

Tokyo, Japan

Kazuma Tanii