Resonac Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Kazuma Matsui

Yusuke Goto

Itaru Yanagi

Kenichi Takeda

Michiru Fujioka

Atsushi Suzuki

Yoshimitsu Yanagawa

Takahide Yokoi

Rena Akahori

Yuki Oka

A plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

Plasma etching method and method for manufacturing semiconductor element

A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

Method for removing metal compound

A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride, which is a compound of bromine or iodine and fluorine, is brought into contact with a member to be etched () having an etching object, which is an object to be etched by the etching gas, thereby etching the etching object without using plasma. The etching object contains at least one metal selected from among titanium, indium, and tin. Also disclosed is a production method for manufacturing a semiconductor element using the dry etching method as well as a cleaning method for cleaning an inner surface of a chamber of a semiconductor element manufacturing apparatus using the dry etching method.

Dry etching method, production method for semiconductor element, and cleaning method

There is provided a method for producing high-purity bromine pentafluoride while leaving a less amount of an unreacted fluorine gas. The method for producing bromine pentafluoride includes a reaction step of feeding a bromine-containing compound, which is at least one of a bromine gas and bromine trifluoride, and a fluorine gas to a reactor to give a (fluorine atom):(bromine atom) molar ratio, that is, F/Br of 3.0 or more and 4.7 or less and reacting the bromine-containing compound and the fluorine gas to each other to obtain a reaction mixture containing bromine pentafluoride and bromine trifluoride; and a separation step of separating bromine pentafluoride and bromine trifluoride in the reaction mixture from each other.

Method for producing bromine pentafluoride

Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etching target in the absence of plasma to selectively etch the etching target with respect to the non-etching target. The etching target contains a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom. The non-etching target includes at least one selected from tantalum, cobalt, copper, titanium nitride, nickel, and amorphous carbon. The etching step is performed under temperature conditions of from 40° C. to less than 350° C.

Etching method and method for manufacturing semiconductor element

Provided are a gas treatment method and a gas treatment device capable of efficiently removing a bromofluoroethylene. A gas containing a bromofluoroethylene is brought into contact with an adsorbent () having pores with an average pore diameter of 0.4 nm or more and 4 nm or less in a temperature environment of not less than 0° C. and less than 120° C. to allow the adsorbent () to adsorb the bromofluoroethylene, and thus the bromofluoroethylene is separated from the gas.

Gas treatment method and gas treatment device

An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target () including an oxide is placed in a chamber (), and the oxide included in the etching target () is etched in the chamber () using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below: wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber ().

Etching method

There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object () containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object () without using plasma under a pressure of 1 Pa to 80 kPa.

Etching method for silicon nitride and production method for semiconductor element

A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched () including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

Dry etching method, method for manufacturing semiconductor element, and cleaning method

A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

Method for removing halogen fluoride, quantitative analysis method for gas component contained in halogen fluoride mixed gas, and quantitative analyzer

An apparatus for storing a thin film device, the apparatus including: a thin film devicehaving an insulating thin film containing Si and having a thickness of 100 nm or less; a solution in contact with the thin film; and a container having a tank that seals the solution, wherein the solution is a solution that satisfies any of the following conditions (1) to (3).

Apparatus and method for storing thin film device and method for measuring biological molecule

A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

Nanopore-forming method, nanopore-forming device and biomolecule measurement device

Provided are a first tank; a second tank; a thin film having a nanopore, which communicates the first tank to the second tank, and disposed between the first and second tanks; a first electrode provided in the first tank; and a second electrode provided in the second tank. A wall surface of the nanopore has an ion adsorption preventing structure to prevent desorption/adsorption of an ion contained in a solution filling the first tank and/or the second tank, and a voltage is applied between the first and second electrodes to measure an ion current flowing through the nanopore.

Current measurement device and current measurement method using nanopore

An apparatus for a thin film device is used for analyzing a biopolymer. The apparatus has a thin film, a first solution in contact with a first surface of the thin film, a second solution in contact with a second surface of the thin film, a flow path or a conductive wire for adjusting the potential difference between the first solution and the second solution to a small value, a control unit for controlling the flow path or the conductive wire, an inlet from which a biopolymer is introduced to at least one of the first and second solution, a first electrode provided in the first solution, a second electrode provided in the second solution and an ammeter for measuring the current which flows between the first and second electrode when the biopolymer passes through a hole in the thin film between the first and second solution.

Biopolymer analysis device and biopolymer analysis method

A solution tank device comprises: an insulating thin film, which is configured to allow an object to be measured to pass therethrough, and has a thickness of 1 micrometer or less; a first solution tank, which is configured to support one surface of both surfaces of the insulating thin film; and a first conductive structure, which has a sheet resistance of 10ohms or less in a portion in which contact friction occurs between the first solution tank and an object outside of the first solution tank.

Growing community of inventors

Tokyo, Japan

Kazuma Matsui