Nichia Corporation

Kazuki Yamaguchi

Yoshitaka Sumitomo

Haruki Takeda

Naoto Inoue

Masaaki Shuto

A semiconductor element includes: a substrate having a first surface, a second surface, and at least one lateral surface; and a semiconductor layer formed on the second surface. The at least one lateral surface includes: at least one flat region, a first region that extends along a first direction parallel to the first surface at a position apart from the first surface and the second surface, wherein a surface roughness of the first region is larger than a surface roughness of the flat region, and a second region that extends along the first direction parallel to the first surface at a position between the first region and the first surface and apart from the first surface, wherein a surface roughness of the second region is larger than the surface roughness of the flat region. The substrate includes, in an interior of the substrate, a plurality of modified portions.

Method of manufacturing semiconductor element and semiconductor element

A method of manufacturing a semiconductor element includes a first irradiation step in which a laser beam is irradiated to form, in the interior of the substrate, a plurality of first modified portions aligned along a first direction; a second irradiation step in which a laser beam is irradiated to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction; and a third irradiation step which a laser beam is irradiated to form a plurality of third modified portions aligned along the first direction at a position closer to the first surface than the first modified portions and overlapping the plurality of first modified portions in a thickness direction of the substrate.

A method of manufacturing a light-emitting element includes condensing a laser beam inside a substrate provided with a semiconductor structure to form modified portions including first and second modified portions, including scanning the substrate along a predetermined planned cleavage line to form the first modified portions on the planned cleavage line inside the substrate and cracks generated from the first modified portions, and then scanning the substrate with a laser beam along a first predetermined imaginary line parallel to the planned cleavage line in a top view and is offset from the planned cleavage line in an in-plane direction of the substrate by a predetermined distance to perform second irradiation to form the second modified portions on the first predetermined imaginary line inside the substrate to facilitate development of the cracks generated from the first modified portions. The method then includes cleaving the substrate starting from the first modified portions.

Method of manufacturing light-emitting element

A method of manufacturing a light-emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; forming a plurality of modified regions inside the substrate of the wafer by irradiating the substrate with a laser beam; and separating the wafer into a plurality of light-emitting elements after said irradiating the substrate with the laser beam. Said forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.

Growing community of inventors

Tokushima, Japan

Kazuki Yamaguchi