Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Kazuki Tateoka

Masahiko Inamori

Hirokazu Makihara

Shingo Matsuda

Haruhiko Koizumi

Kunihiko Kanazawa

Noriyuki Yoshikawa

Katsuhiko Kawashima

Akihisa Sugimura

Kaname Motoyoshi

Katsushi Tara

Hideki Takehara

Shingo Enomoto

Junji Kaido

Kazuhiko Ohashi

Satoshi Makioka

Oki Maya

Singo Enomoto

Kenta Matsui

Singo Matsuda

Katuhiko Kawashima

Shingo Matuda

In the present invention, a first circuit patterncomposing a semiconductor element is formed on the front side of a substrate, a first insulating layeris formed on the first circuit pattern, solder electrodesfor external connection are formed on the first insulating layer, a second insulating layeris formed on the backside of the substrate, a second circuit patternis formed on the second insulating layer, through viasare formed to connect the first circuit patternand the second circuit pattern, chip passive componentsare placed on the second circuit pattern, and the backside of the substrate is integrally molded with epoxy resinsuch that the epoxy resincovers the chip passive components

Semiconductor device and method of manufacturing the same

A radio frequency signal is input to the bases of transistors via respective capacitors, is amplified, and is output from the collectors of the transistors. The emitter of each transistor is grounded. A bias current input from a bias circuit is supplied to the bases of the transistors via respective resistors both during low-output operation and during high-output operation. The collectors of the transistors are connected via an impedance circuit to a bias voltage input terminal. Therefore, during high-output operation, a direct current offset voltage is generated by the impedance circuit based on a portion of a radio frequency signal output from the collectors, thereby further increasing the bias current.

Radio frequency power amplifier

A bias circuit operable to supply a bias current to a first transistor includes: a second transistor having a collector terminal connected to a first power supply; a first resistance element having one end connected to an emitter terminal of the second transistor and having the other end connected to a base terminal of the first transistor; a second resistance element having one end connected to the emitter terminal of the second transistor and having the other end connected to ground potential; at least one third resistance element provided between a base terminal of the second transistor and a second power supply; and a plurality of temperature compensation circuits connected to the base terminal of the second transistor which are operable to control a base potential of the second transistor so that the potential falls as a temperature rises.

Radio-frequency power amplifier

A small, high performance high frequency power amplifier enables easily adjusting and switching the impedance. The high frequency power amplifier module includes a first semiconductor chip including one or a plurality of high frequency amplification devices, and a second semiconductor chip including one or more high frequency matching circuit devices and one or more switching devices. The second semiconductor chip includes the matching circuit for a high frequency amplifier device. The second semiconductor chip also includes a circuit composed of a capacitance and a switching device connected in series or parallel to the capacitance. The switching device switches on or off so that the capacitance is connected or is not connected as a part of the matching circuit.

High frequency power amplifier

A radio-frequency power amplifier for preventing a final-stage HBT from being destroyed is provided. To this end, a radio-frequency multistage power amplifier of the present invention includes: a first amplification stage having a first hetero bipolar transistor of which collector output is detected; a second amplification stage which is prior to the first amplification stage and which has a second hetero bipolar transistor in which the detection result is reflected; a first resistor provided between a collector of the second hetero bipolar transistor and a power supply; and a protection circuit which is connected between a collector of the first hetero bipolar transistor and the collector of the second hetero bipolar transistor, detects output from the collector of the first hetero bipolar transistor, and reduces a voltage of the collector of the second hetero bipolar transistor in accordance with the detected output.

A small, high performance, multifunctional high frequency circuit that is multiband and multimode compatible reduces loss from a switch formed on the output side of a final stage amplification unit. The final stage amplification unit power amplifies an input signal and outputs an amplified signal. A first matching circuit impedance converts the amplified signal input thereto at a first input impedance, and outputs a first impedance-converted signal at a first output impedance. A control unit that generates a control signal denoting signal path selection information. A switch unit selects one of at least two signal paths based on the control signal, passes the first impedance-converted signal at an on impedance through the selected path, and outputs the pass signal. A second matching circuit impedance converts a pass signal input thereto at a second input impedance, and outputs a second impedance-converted signal at a second output.

High frequency circuit, semiconductor device, and high frequency power amplification device

A radio frequency power amplifierincludes a former-stage transistor, a latter-stage transistor, and an inter-stage matching circuitfor connecting the former-stage transistorand the latter-stage transistor. The inter-stage matching circuitincludes a high-pass filter circuit including a transfer line m, a capacitor Cand a capacitor C; and a transfer line mwith which a passage phase of a secondary harmonic signal is 15 degrees or greater.

A radio frequency signal RF is input to a base of each of transistors TRthrough TRn via a corresponding capacitor among capacitors Cthrough Cn, is amplified, and is output from a collector of each of the transistors TRthrough TRn. An emitter of each of the transistors TRthrough TRn is grounded. A bias voltage DC given from a bias circuit Bias is supplied to the base of each of the transistors TRthrough TRn via a corresponding resistor among resistors Rathrough Ran. A signal line for the bias voltage DC is connected to an input line for the radio frequency signal RF via the bridge resistor R in a direct current manner.

A high-frequency power amplifier with a temperature compensation function for power amplifying a high-frequency signal, includes: a power amplifying transistor having an emitter grounded; a high power output bias circuit that supplies a high power output current corresponding to a high power output of the high-frequency power amplifier to the power amplifying transistor; and a low power output bias circuit that supplies a low power output current corresponding to a low power output of the high-frequency power amplifier to the power amplifying transistor.

High-frequency power amplifier

A capacitoris formed by laminating a lower electrode, a dielectricand an upper electrodein this order. An inductoris formed as a thin metal wiring of a spiral shape so as to have an inductor component. The inductoris formed in the same wiring layer and of the same metal material as the lower electrodeof the capacitorconnected to a base electrodeof a transistor. The DC bias is inputted to the base B of the transistorthrough the inductorof a spiral shape from the DC bias supply wiring BP, and a radio frequency signal is inputted to the base B of the transistorthrough the capacitor

Semiconductor integrated circuit apparatus

The transistor circuitincludes a plurality of transistor cellseach having a transistor, a base ballast resistor, a capacitor, and an inductor. The transistorshave the respective collectors commonly connected to a collector terminalof the transistor circuitand the respective emitters commonly connected to an emitter terminalthereof. Each base ballast resistoris connected to bases of the transistorat one end and to a base terminalof the transistor circuitat the other end. The capacitoris serially connected to the inductor, thus to form a serial resonant circuit, which is connected in parallel with the base ballast resistorand provided between the bases of the transistorand the base terminalof the transistor circuitand connected thereto.

Transistor circuit

A transistor integrated circuit apparatus generating less noise, having superb RF characteristics, and preventing thermal runaway of transistors is provided. Owing to capacitors Cthrough Chaving one end commonly connected to an RF signal input terminal RFin and the other end connected to a base electrode of a corresponding transistor, and inductors Lthrough Lhaving one end commonly connected to a DC power supply input terminal DCin and the other end connected to a base electrode of a corresponding transistor, RF noise generated in a DC power supply circuit is reduced. This can reduce the RF noise output from the transistors Trthrough Tr. The inductors Lthrough Lprevent an RF signal input from the RF input terminal RFin from flowing toward the DC power supply circuit. This can prevent the RF signal from being lost by the flow thereof toward the DC power supply circuit.

Transistor integrated circuit apparatus

A temperature compensation circuitincluded in a collector voltage generation sectionapplies an offset voltage Vofs(T) to a power control signal Vctrl according to a device temperature. The resulting temperature compensation circuit output voltage Vctrl' (T) is applied to a collector terminal of a bipolar transistorthrough a voltage regulatorand a choke inductor

High-frequency power amplifier and communication apparatus

The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

Growing community of inventors

Kyoto, Japan

Kazuki Tateoka