Panasonic Intellectual Property Management Co., Ltd.

Kazuki Sakai

Akio Furusawa

Taichi Nakamura

Hidetoshi Kitaura

Kiyohiro Hine

Ryou Kuwabara

Hiroaki Yoshida

Takehiro Tanaka

Provided is a magnetic cooling device including: in a hollow container, an inert gas; a material filling part containing a refrigerant and magnetic material particles having a magnetocaloric effect; gas storages containing the refrigerant at both ends of the material filling part; and material partitions between the material filling part and the gas storages, in which a volume proportion of the inert gas in the hollow container is 1 vol % or more and 12 vol % or less.

Magnetic cooling device

A magnetostrictive material includes a FeGaSm alloy that is represented by Expression (1),FeGaSm&#x2003;&#x2003;(1)

Magnetostrictive material and magnetostriction type device using the same

Provided herein is a magnetostriction element having a large power output and a high power density. The magnetostriction element is comprised of a magnetostrictive material that is a monocrystalline alloy represented by the following formula (1),FeGaX,&#x2003;&#x2003;Formula (1)wherein &#x3b1; and &#x3b2; represent the Ga content (at %) and the X content (at %), respectively, X is at least one element selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Cu, and C, and the formula satisfies 5&#x2264;&#x3b1;&#x2264;40, and 0&#x2264;&#x3b2;&#x2264;1.

Magnetostriction element and magnetostriction-type vibration powered generator using same

A magnetostrictive material includes a FeGaBa alloy that is represented by Expression (1),FeGaBa&#x2003;&#x2003;(1)

A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 &#x3bc;m or more and 100 &#x3bc;m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the first solder joining portion and the buffer material are respectively within 62%.

Mount structure

A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt % to 30 wt %, Te of which a content is in a range of 0.01 wt % to 1.5 wt %, Au of which a content is in a range of 0.005 wt % to 1 wt %, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a balance of Sn.

Solder alloy and bonded structure using the same

A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.

Mount structure including two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer

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Osaka, Japan

Kazuki Sakai