Sony Corporation

Sony Semiconductor Solutions Corporation

Birumen Kagoshima Co., Ltd.

Kazuki Nomoto

Kaneyoshi Takeshita

Hiroyuki Ohri

Kazuomi Nomoto

Manabu Yagi

Akihiro Nakamura

Takashi Kubodera

Yukihiro Kiyota

It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit. The solid-state image sensor further includes a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FO unit via the interlayer insulating film and including a back gate unit.

Solid-state image sensor to reduce display unevenness of a captured image

Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements () arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit () that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip () on which the photoelectric conversion elements are disposed and a chip () on which at least a part of the detection unit is disposed are different from each other.

Solid-state imaging device and imaging device

A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Solid-state imaging device

There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected.

Solid-state image sensor with MOS capacitor storage section to which a negative bias is applied after a reset sampling period and electronic device incorporating same

A wind power generator comprises a first power generator including a rotor arranged so as to be coaxial with a rotation shaft and generates electric power by the rotation of the rotor, a flywheel which is coaxial with the rotation shaft and arranged through a one-way clutch so that when the rotation shaft increases its speed, the flywheel is in an integrally rotating state with the rotation shaft, and when the rotation shaft reduces its speed, the flywheel is separated from the rotation shaft to rotate inertially, a second power generator including a rotor arranged so as to be coaxial with the flywheel and rotate integrally with the flywheel generates the electric power by the rotation of the rotor with the rotation of the flywheel, and an output portion which externally outputs any one of the electric powers generated by the first and second power generators.

Wind power generator

An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

Imaging apparatus and method, electronic device, and program

Biasing unit, a spindle member, and a link mechanism of a windmill for a wind power generator vary an angle of a blade in a first stage where the angle is made nearly parallel to the wind so that the blade easily rotates in light winds, a second stage where the angle is made nearly perpendicular to the wind so that the blade easily rotates at high speed when the wind speed increases, and a third stage where the blade is pushed back from the state of being nearly perpendicular to the wind to the state of being nearly parallel to the wind so as to prevent the excessive rotation in strong winds, without electrical control being not required. Accordingly this wind power generator has an excellent starting performance and can control the excessive rotation at low cost.

Windmill for wind power generator and wind power generator

A field-effect transistor includes a semi-insulating substrate, a source electrode, a drain electrode, a gate electrode, the electrodes being provided on the semi-insulating substrate, and a buried gate region which is provided under the gate electrode and in which an impurity is doped, wherein a concave slit is provided in the semi-insulating substrate, the slit being located between the gate electrode and the drain electrode and being adjacent to the buried gate region at the side of the drain electrode.

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Kanagawa, Japan

Kazuki Nomoto