Toyoda Gosei Co., Ltd.

Toyota Gosei Co., Ltd.

Kazuki Nishijima

Jun Ito

Masanobu Senda

Toshimasa Hayashi

Naoki Shibata

Koji Okuno

Yusuke Toyoda

Toshiaki Chiyo

Mitsuhiro Inoue

Tetsuya Taki

Masato Aoki

Mitsuhisa Narukawa

Shuhei Yamada

A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlGaN (0&#x3c;x&#x3c;1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z&#x3c;x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.

Group III nitride semiconductor light-emitting device

A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

Group III nitride-based compound semiconductor light-emitting device and method for producing the same

A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.

Process for producing group III nitride compound semiconductor

A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.

Semiconductor light emitting element and method of making same

An insulation filmmade of SiOis formed on a p-type layerand a multiple thick film positive electrodewhich is a metal film formed through metal deposition, is formed on the insulation filmand on the p-type layerat the central portion of which has a window and is exposed. The insulation filmhas a thickness of one fourth multiple of emission wavelength. Thickness of the insulation filmis generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.

Semiconductor light-emitting device

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Aichi-ken, Japan

Kazuki Nishijima