Screen Holdings Co., Ltd.

Kazuki Nishihara

Masaki Inaba

Yuya Akanishi

In a substrate processing method, a silicon oxide film formed on a substrate is etched. The substrate processing method includes a first etching step and a second etching step. In the first etching step, the silicon oxide film is selectively etched against another film by supplying a hydrogen fluoride gas into a chamber in a state in which a pressure in the chamber is a first pressure lower than the atmospheric pressure. In the second etching step, the silicon oxide film is selectively etched against the another film by supplying the hydrogen fluoride gas into the chamber in a state in which the pressure in the chamber is a second pressure lower than the atmospheric pressure. The second pressure is lower than the first pressure.

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Kyoto, Japan

Kazuki Nishihara