Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Kazuki Nakamura

Junichi Ishii

Nobuaki Okita

Yoshifumi Okada

Tomoyuki Shinohara

Takuma Takahashi

Takashi Shinohara

Shoji Uemae

Akiyoshi Aomatsu

Yoshinori Izumi

Nobutaka Tanahashi

Koji Hashimoto

Takahiro Yamaguchi

Masahiro Nonomura

Katsunori Tanaka

An upper holding device holds a substrate in a horizontal attitude without rotating the substrate. A lower holding device rotates a substrate while holding the substrate by suction. A substrate held by the upper holding device is cleaned with use of a cleaning liquid, and a substrate held by the lower holding device is cleaned with use of a cleaning liquid. Gas in a processing space is exhausted by exhaust equipment of a factory through an exhaust system. When a substrate is held by the upper holding device, gas in the processing space is not exhausted or gas in the processing space is exhausted at a first flow rate. Gas in the processing space is exhausted at a second or third flow rate that is higher than the first flow rate when the substrate is held by the lower holding device.

Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method

A substrate cleaning device includes a substrate holder, a lower-surface brush, a first liquid nozzle and a second liquid nozzle. The substrate holder holds a substrate in a horizontal attitude. The lower-surface brush is configured to be movable between a processing position for cleaning of the substrate and a waiting position that overlaps with the substrate held by the substrate holder in an up-and-down direction. Further, the lower-surface brush is configured to be rotatable about an axis extending in the up-and-down direction. The lower-surface brush cleans a lower surface of the substrate by coming into contact with the lower surface of the substrate. The first liquid nozzle discharges a cleaning liquid to a center portion of the lower-surface brush, at a waiting position. The second liquid nozzle discharges a cleaning liquid to an end portion of the lower-surface brush, at the waiting position.

Substrate cleaning device

A substrate is held in a horizontal attitude by a substrate holder. At a processing position, a lower surface of the substrate held by the substrate holder is cleaned by a lower-surface brush. The lower-surface brush is cleaned by a brush cleaner at a waiting position that overlaps with the substrate held by the substrate holder in an up-and-down direction and is below a processing position. The lower-surface brush is lifted and lowered by a lower-surface brush lifting-lowering driver between the processing position and the waiting position.

Substrate cleaning device and substrate cleaning method

A substrate cleaning apparatus includes an upper holding device holding an outer peripheral end of a substrate, and a lower surface brush contacting a lower surface of the substrate to clean the lower surface. The lower surface brush moves between a contact position where the lower surface brush contacts the lower surface of the substrate held by the upper holding device and a separation position where the lower surface brush is separated from the substrate held by the upper holding device by a certain distance. At the separation position, the lower surface brush rotates at a first rotation speed. At the contact position, the lower surface brush rotates at a second rotation speed higher than the first rotation speed at a time point when the lower surface brush contacts the lower surface and a time point when the lower surface brush is separated from the lower surface.

Substrate cleaning apparatus and substrate cleaning method

A cleaner comes into contact with a lower-surface center region of a substrate held by a first holder, so that the lower-surface center region is cleaned. The cleaner comes into contact with a lower-surface outer region of the substrate rotated by a second holder, so that the lower-surface outer region of the substrate is cleaned. During cleaning of the lower-surface center region, the second holder is rotated about a vertical axis while not holding the substrate. Alternatively, during cleaning of the lower-surface center region, the gas injector arranged between the cleaner and the second holder injects gas toward the substrate from a first height spaced apart from the substrate by a predetermined distance. Further, during drying of the lower-surface center region, the gas injector injects gas toward the substrate from a second height closer to the substrate than the first height.

A lower-surface center region of a substrate held by a first holder is cleaned by a cleaner. A lower-surface outer region of the substrate rotated by a second holder is cleaned by the cleaner. A mobile base provided with the second holder and the cleaner is moved in a horizontal plane such that a reference position of the first holder coincides with a center axis of the second holder in a plan view when the substrate is received and transferred between the first holder and the second holder, and is moved in the horizontal plane such that the cleaner overlaps with the lower-surface center region of the substrate held by the first holder and a center axis of the cleaner coincides with a first portion different from a center of the substrate in the plan view when the lower-surface center region is cleaned.

A control device is provided which, at a time of upper surface treatment for treating an upper surface of a substrate with a treating device, supplies a treating liquid from a treating liquid supply source and operates a first control valve to supply a gas at a first flow rate from a gas nozzle, while operating a rotary drive device to spin the substrate at a first rotational frequency, and at a time of drying treatment, after completion of the upper surface treatment, for drying the substrate by increasing the rotational frequency of the rotary drive device to spin the substrate at a second rotational frequency, operates the first control valve and second control valve to supply the gas at a higher flow rate than the first flow rate from the gas nozzle.

Substrate treating apparatus and substrate treating method

A brush is moved from a central position to an outer periphery position while the brush is contacted with an upper surface of a substrate being rotated at a first rotational speed. In this way, a flat region of the substrate is scrub-cleansed. Thereafter, the brush is contacted with a bevel region of the substrate being rotated at a second rotational speed lower than the first rotational speed. In this way, the bevel region of the substrate is scrub-cleansed. Thereafter, while the substrate is rotated at a third rotational speed higher than the second rotational speed, the brush is disposed at an overlapping region cleaning position. In this way, an overlapping region of the flat region and the bevel region are scrub-cleansed.

Substrate treatment method and substrate treatment device

A substrate treatment apparatus for treating a substrate with a chemical liquid in a treatment chamber. The apparatus includes a higher temperature chemical liquid supplying unit, and a rinse liquid supplying unit for rinsing away the higher temperature chemical liquid. A control unit controls a rotation unit for rotating the substrate, as well as the chemical liquid supplying unit and the rinse liquid supplying unit. The higher temperature chemical liquid is supplied while rotating the substrate at a first speed; the rinse liquid is supplied to a center portion of the substrate while rotating the substrate at a lower speed, so that the rinse liquid remains in said center portion; and then the substrate is rotated at a higher speed to spread the rinse liquid over the entire substrate while supplying the rinse liquid onto said center portion.

Substrate treatment apparatus

The inventive substrate treatment apparatus includes: a rotative treatment control unit which controls a first chemical liquid supplying unit and a second chemical liquid supplying unit to perform a first chemical liquid supplying step of supplying a first chemical liquid to a substrate rotated by a substrate holding and rotating mechanism and a second chemical liquid supplying step of supplying a second chemical liquid to the substrate rotated by the substrate holding and rotating mechanism after the first chemical liquid supplying step; and a cleaning control unit which controls the cleaning liquid supplying unit to spout the cleaning liquid from the cleaning liquid outlet port to supply the cleaning liquid to the cup inner wall and/or the base wall surface before start of the second chemical liquid supplying step after end of the first chemical liquid supplying step, and/or during and/or after the second chemical liquid supplying step.

Substrate treatment apparatus, and substrate treatment method

A substrate treatment apparatus includes: a nozzle having an opposing surface to be opposed to and spaced from a front surface of a substrate rotated by a substrate rotating unit, the nozzle further having an outlet port provided in the opposing surface to be opposed to a rotation center of the substrate; a second liquid supply control unit which controls the second liquid supplying unit to fill a space defined between the front surface and the opposing surface with the second liquid in a liquid filled state, and then stop supplying the second liquid to form a liquid puddle in the space; and a first liquid supply control unit which controls a first liquid supplying unit to spout a first liquid from the outlet port after the formation of the liquid puddle.

Substrate treatment apparatus and substrate treatment method

The substrate treatment method is for treating a substrate with a chemical liquid in a treatment chamber. The method includes a higher temperature chemical liquid supplying step, and a rinse liquid supplying step after the higher temperature chemical liquid supplying step. The rinse liquid supplying step includes: a peripheral edge portion treating step of supplying the rinse liquid selectively onto a center portion of the front surface of the substrate so that a chemical liquid treatment is inhibited on the center portion while being allowed to proceed on a peripheral edge portion of the front surface of the substrate; and an entire surface rinsing step of spreading the rinse liquid over the entire front surface of the substrate to replace the chemical liquid with the rinse liquid on the entire front surface of the substrate after the peripheral edge portion treating step.

Growing community of inventors

Kyoto, Japan

Kazuki Nakamura