Mitsubishi Materials Corporation

Mitsubishi Heavy Industries Printing & Packaging Machinery, Ltd.

Sumitomo Mitsubishi Silicon Corporation

Other

Mitsubishi Heavy Industries Machinery Systems, Ltd.

Chukoh Chemical Industries, Ltd.

Kazuki Mizushima

Kenji Yamaguchi

Wataru Saiki

Makoto Urushihara

Kazuhito Ohira

Ichiro Shiono

Masami Miyake

Naoya Murakami

Takashi Nitta

Toshihide Kato

Yuji Shimizu

Hideo Imazato

Tomomi Haraguchi

Keigo Futatsuki

Kimihiro Yamakawa

Kouichi Sassa

A device includes a tank for storing a glue solution; a roll having a surface for transferring the glue solution onto an area of a corrugating medium of a single-faced corrugated fiberboard sheet in the width direction; scraping members for regulating adhesion of the glue solution outside the area on the surface of the roll; a movement mechanism for moving the scraping members in the width direction; and a control device for setting, on the basis of the cutting width dimension with which the double-faced cardboard sheet is to be cut after passing the roll, the area to be a region in which margins in the width direction have been added outside positions of the side edges of the cutting width dimension, and for controlling the movement mechanism to dispose the scraping members at positions corresponding to the positions of the side edges of the glue application region.

Glue application device and glue application method for cardboard sheets and cardboard sheet manufacturing device

A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000&#xb0; C. and equal to or lower than 1900&#xb0; C.; a first cooling process for cooling the first reaction product gas to a temperature of 950&#xb0; C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600&#xb0; C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600&#xb0; C. and equal to or lower than 950&#xb0; C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600&#xb0; C.

Apparatus and method for manufacturing trichlorosilane and method for manufacturing polycrystalline silicon

A web adhesive application device, adhesive application method, and the cardboard sheet manufacturing device are provided with: an adhesive liquid tank for storing an adhesive liquid; an adhesive application roll is configured for transferring the adhesive liquid to an adhesive application region adjusted according to a paper width of a bottom liner board to be glued together with a single face cardboard sheet; a doctor roller for adjusting the adhesive liquid to a set film thickness; scraping members in pressured contact with the surface of the adhesive application roll on the upstream side of the nip section with the doctor roller; and damming members in contact with the surface of the adhesive application roll on the upstream side of the nip section with the doctor roller in the rotation direction and on the downstream side of the scraping member contact positions in the rotation direction.

Web adhesive application device and adhesive application method as well as cardboard sheet manufacturing device

A heat-resistant laminated conveyer belt includes a fluororesin-coated core and a reinforcement layer which is formed on the core through an adhesive layer. The core is obtained by impregnating an aramid fiber woven fabric in a fluororesin dispersion and drying and sintering the fabric. The reinforcement layer is obtained by impregnating an aramid fiber woven fabric to which stretch properties are applied in a fluororesin dispersion and drying and sintering the fabric. The aramid fiber woven fabric of the core is a woven fabric by a plain-weave seamless loom or a circular loom. The aramid fiber woven fabric of the core includes an S-twist weft yarn and a Z-twist weft yarn which are alternatively arranged.

Heat-resistant laminated conveyer belt

An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.

Apparatus for producing trichlorosilane

A device for gluing of a double facer includes a glue bath containing glue; a gluing roll immersed in and coated with the glue; a doctor roll adjusting the glue on the gluing roll to a predetermined thickness, transferred to a single faced corrugated cardboard; a swing roll disposed at an upstream portion of a transferring direction of the corrugated cardboard; and a moving device that moves the swing roll in a direction that the single faced corrugated cardboard is wrapped around the gluing roll. The swing roll is wrapped around the single faced corrugated cardboard, and the number of flute tips of the single faced corrugated cardboard that are concurrently contacting with the gluing roll and applied with the glue is adjusted by moving only the swing roll in such a direction that crosses a sheet face of the single faced corrugated cardboard passing through the nip.

Double facer, and method and device for gluing thereof

A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

Apparatus for producing polycrystalline silicon

Method for producing polycrystalline silicon

A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.

Polycrystalline silicon producing method

In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000&#xb0; C. and equal to or lower than 1900&#xb0; C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600&#xb0; C. or higher within 0.01 seconds from the initiation of cooling and to 500&#xb0; C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500&#xb0; C. and equal to or lower than 950&#xb0; C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500&#xb0; C.

Method for producing trichlorosilane and method for utilizing trichlorosilane

A semiconductor substrate, a field effect transistor and their manufacturing methods provided with, in order to lower penetrating dislocation density and reduce surface roughness to a practical level, an Si substrate, a first SiGe layeron the Si substrate, and a second SiGe layerarranged on the first SiGe layer either directly or with an Si layer in between; wherein, the first SiGe layer has a film thickness that is thinner than twice the critical film thickness, which is the film thickness at which dislocation occurs resulting in lattice relaxation due to increased film thickness, the Ge composition ratio of the second SiGe layer is at least lower than the intralayer maximum value of the Ge composition ratio in the first SiGe layer or in the first SiGe layer at the contact surface with the Si layer, and the second SiGe layer has an incremental composition region in which the Ge composition ratio gradually increases towards the surface at least in a portion thereof.

Semiconductor substrate, field-effect transistor, and their manufacturing method of the same

The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with having low penetrating dislocation density and low surface roughness, prevent worsening of surface and interface roughness during heat treatment of a device production process and so forth. A production method of a semiconductor substrate W, in which SiGe layersandare formed on an Si substrate, is comprised of a heat treatment step in which heat treatment is performed either during or after the formation of the SiGe layers by epitaxial growth, at a temperature that exceeds the temperature of the epitaxial growth, and a polishing step in which irregularities in the surface formed during the heat treatment are removed by polishing following formation of the SiGe layers.

Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor

An optical material including a crystalline silicon and Fe Si in the form of dots, islands, or a film is provided. The Fe Si has a symmetrical monoclinic crystalline structure belonging to the P2 /c space group and is synthesized at the surface or in the interior of the crystalline silicon. The monoclinic structure corresponds to a deformed structure of &bgr;-FeSi generated by heteroepitaxial stress between the &lcub;110&rcub; plane of the Fe Si and the &lcub;111&rcub; plane of the crystalline silicon. The value of x is 0.85&lE;x&lE;1.1. An optical element using the optical material is also provided.

Optical material and optical element using the same

A semiconductor substrate, a field effect transistor, a method of forming a SiGe layer and a method of forming a strained Si layer using the same, and a method of manufacturing a field effect transistor are provided, which enable the threading dislocation density of the SiGe layer to be reduced and the surface roughness to be minimized. On top of a Si substrate is provided a SiGe buffer layer constructed of a plurality of laminated layers comprising alternating layers of a SiGe gradient composition layer in which the Ge composition ratio increases gradually from the Ge composition ratio of the base material, and a SiGe constant composition layer which is provided on top of the gradient composition layer and in which the Ge composition ratio is equal to that of the upper surface of the gradient composition layer.

Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor

Growing community of inventors

Saitama, Japan

Kazuki Mizushima