Sharp Kabushiki Kaisha Corporation

Sakai Display Products Corporation

Other

Jsr Corporation

Mitsubishi Gas Chemical Company, Inc.

Sharp Corporation

International Center for Materials Research

Kazuki Kobayashi

Ikuo Sakono

Nobutake Nodera

Takao Matsumoto

Taimi Oketani

Yoshiaki Matsushima

Shigeru Ishida

Ryohei Takakura

Tadahiro Ohmi

Shigetoshi Sugawa

Hirohiko Nishiki

Akihiro Morimoto

Takeshi Hara

Hiroto Yoshioka

Hitoshi Ono

Kimiaki Fujino

Keiichi Tanaka

Masumi Kubo

Hideo Ohno

Akihiro Yamamoto

Hirofumi Sasaki

Masashi Kawasaki

Yasunobu Tagusa

Yasuo Matsuki

Yasumasa Takeuchi

Tetsunori Tanaka

Wataru Nakamura

Taketo Maruyama

Yasuaki Yokoyama

Kenichi Kitoh

Satoshi Okabe

Kazuaki Niwa

Shinji Shiraki

Toshiaki Muratani

Tomoyuki Adaniya

Ryouhei Takakura

Takashi Kimura

Tomomi Hikida

Yuichi Maida

Norio Adachi

Kensuke Yano

Kouji Matsuoka

Tatsuo Takami

Hiroshi Morikawa

Toshiyuki Gotou

There are provided a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel having a first thin film transistor and a drive circuit having a second thin film transistor and driving the pixel, wherein a first channel region of the first thin film transistor and a second channel region of the second thin film transistor are configured to have different electrical characteristics (for example, electron mobility, thereby enabling the first thin film transistor and the second thin film transistor to function suitably for the each role thereof).

Display apparatus and method of manufacturing display apparatus

The thin film transistor includes: a gate electrode formed on a surface of a substrate; a polysilicon layer formed on an upper side of the gate electrode; an amorphous silicon layer formed on the polysilicon layer so as to cover the same; an n+ silicon layer formed on an upper side of the amorphous silicon layer; and a source electrode and a drain electrode which are formed on the n+ silicon layer, wherein, in a projected state in which the polysilicon layer, the source electrode and the drain electrode are projected onto the surface of the substrate, a part of the polysilicon layer and a part of each of the source electrode and the drain electrode are adapted so as to be overlapped with each other, and in the projected state, a minimum dimension, in a width direction orthogonal to a length direction between the source electrode and the drain electrode, of the polysilicon layer located between the source electrode and the drain electrode is smaller than dimensions in the width direction of the source electrode and the drain electrode.

Thin film transistor and display panel

The method for manufacturing a thin film transistor includes the processes of forming a gate electrode on a surface of a substrate, forming an insulation film on the surface of the substrate on which the gate electrode is formed, forming a first amorphous silicon layer on the surface of the substrate on which the insulation film is formed, annealing a plurality of required places separated from each other on the first amorphous silicon layer by irradiating the same with an energy beam to change the required places to a polysilicon layer, forming a second amorphous silicon layer by covering the polysilicon layer, forming an n+ silicon layer on a surface of the second amorphous silicon layer, etching the first amorphous silicon layer, the second amorphous silicon layer and the n+ silicon layer.

Method for manufacturing thin film transistor, thin film transistor and display panel

The thin film transistor includes a gate electrode formed on a surface of a substrate; a first amorphous silicon layer formed on an upper side of the gate electrode; a plurality of polysilicon layers separated by the first amorphous silicon layer and formed on the upper side of the gate electrode with a required spaced dimension; a second amorphous silicon layer and an n+ silicon layer which are formed on the upper side of the plurality of polysilicon layers and the first amorphous silicon layer; and a source electrode and a drain electrode formed on the n+ silicon layer.

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Etching liquid for a copper/titanium multilayer thin film

A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.

Transistor array and active-matrix substrate

A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

Method of making a substrate having buried structure and method for fabricating a display device including the substrate

The invention provides a radiation-sensitive resin composition, by which a patterned insulation film whose water repellency varies is easily formed with high precision, a process for forming a patterned insulation film using this composition, a display element and an flat-panel disply device using the composition, and a process for producing the flat-panel disply device. The resin composition comprises (A) an alkali-soluble copolymer, (B) a 1,2-quinonediazide compound and (C) a water-repellent siloxane resin in particular proportions. In the production process of the patterned insulation film, patterning exposure and development are conducted on a coating formed of the resin composition. The display element and flat-panel disply device are equipped with an interlayer insulation film formed by the resin composition. The production process of the flat-panel disply device comprises an interlayer insulation film-forming step including a treatment of patterning exposure exposing conductor layer-forming regions in an exposure that only surface layer portions are cured in one part thereof, and the whole in the thickness-wise direction thereof is cured in the other parts, and a conductor layer-forming step of forming conductor layers on the surface of the interlayer insulation film with a liquid material.

Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device

There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

Conductive film forming composition, conductive film, and method for forming the same

Substrate having buried structure, display device including the substrate, method of making the substrate and method for fabricating the display device

A cleaning apparatus of the present invention includes a roll brush for scrubbing the surface of the substrate, and an ultrasonic nozzle for blowing an aqueous cleaning solution against the surface of the substrate and generating an ultrasonic wave, wherein the roll brush and the ultrasonic nozzle are provided so as to oppose one another so that the substrate can be set in between. With the synergetic effects of brush scrubbing cleaning, ultrasonic cleaning and shower-cleaning, the precision cleaning of the upper surface of the substrate can be performed at a sufficient level of cleanliness. Moreover, in a state where the substrate to be cleaned is set, the roll brush can be cleaned automatically by the ultrasonic nozzle, and it is therefore possible to maintain the roll brush at high level of cleanliness without requiring maintenance operations. Furthermore, by integrating the roll brush and the ultrasonic wave nozzle in one part, the size of the apparatus can be reduced in the transport direction of the substrate, thereby reducing an overall footprint area.

Cleaning apparatus

To provide an ultrasonic processing device that is capable of effectively carrying out a cleaning operation, a resist-stripping operation, etc. by projecting ultrasonic uniformly over an entirety of the ultrasonic processing target region by means of ultrasonic oscillation elements each having a width smaller than an ultrasonic processing target region of a processing object, as well as to provide an electronic parts fabrication method using the foregoing device, a plurality of ultrasonic oscillation elements are arranged so as to planarly extend in a glass substrate transport direction and in a glass substrate width direction, and projected figures obtained by projecting said ultrasonic oscillation elements to a plane perpendicular to the glass substrate transport direction form a single belt-like region of a width exceeding a width of the ultrasonic processing target region. The foregoing arrangement causes ultrasonic-projected regions of the ultrasonic oscillation elements to partly overlap each other on a surface of the glass substrate when the glass substrate is transported by transport rollers in the transport direction, thereby enabling ultrasonic projection over the complete entirety of the ultrasonic processing target region.

Ultrasonic processing device and electronic parts fabrication method using the same

In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiN having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO ). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

Thin film transistor and matrix display device

To provide an ultrasonic cleaning device (1) that ensures stable operation of a vibrating element for generating ultrasonic without a complex structure and distribution of a great quantity of a cleaning liquid and (2) that is capable of cleaning upper and lower surfaces of a cleaning target easily, an ultrasonic cleaning section of the device is provided with an upper cleaning-liquid-supply nozzle and a lower cleaning-liquid-supply nozzle for projection of ultrasonic. The upper cleaning-liquid-supply nozzle supplies an upper surface cleaning liquid to an upper surface of a glass substrate. The lower cleaning-liquid-supply nozzle supplies the lower surface cleaning liquid to a lower surface of the substrate in a form of shower to which ultrasonic has been projected. A vibrating element for generating ultrasonic to be projected to the lower surface cleaning liquid is provided in a cleaning liquid distribution path that extends from an upstream side to a downstream side in a direction in a range of a horizontal direction to an upward direction.

Ultrasound cleaning device and resist-stripping device

Growing community of inventors

Izumi, Japan

Kazuki Kobayashi