Ube Industries, Inc.

Ube Electronics, Ltd.

Kazuki Iwashita

Masataka Fujinaga

Shinsuke Jida

Takuma Sakai

Mao Sumino

Koichi Fukuda

Takayuki Ueda

Takafumi Kawano

Keigo Nagao

Hiroshi Ichikawa

Masataka Yamanaga

Ryuji Oyama

Yoshiko Furuya

Shinji Fukuda

Takuya Maruyama

Kensuke Tanaka

Hiroshi Tsuchiya

Yuki Nagao

An oxynitride phosphor powder has a fluorescence peak wavelength of 587 to 630 nm and a high external quantum efficiency. A method of producing the oxynitride phosphor powder containing Li at 50 to 10,000 ppm includes mixing silicon nitride powder, a substance serving as an aluminum source, a substance serving as a calcium source and a substance serving as an europium source; firing the mixture at 1500 to 2000&#xb0; C. in an inert gas atmosphere or a reducing gas atmosphere to obtain a fired oxynitride phosphor composed mainly of Ca-containing &#x3b1;-SiAlON, as an intermediate; and heat treating the fired oxynitride phosphor at a temperature of 1450&#xb0; C. to less than the firing temperature, in an inert gas atmosphere or in a reducing gas atmosphere in the presence of Li.

Oxynitride phosphor powder and method for producing same

An (oxy)nitride phosphor powder has a fluorescence peak wavelength of 610 to 625 nm and also has higher external quantum efficiency than the conventional one. The (oxy)nitride phosphor powder includes an &#x3b1;-type SiAlON and aluminum nitride, represented by the compositional formula: CaEuSiAlONwherein x1, x2, y, z fulfill the following formulae: 1.60&#x2266;x1+x2&#x2266;2.90, 0.18&#x2266;x2/x1&#x2266;0.70, 4.0&#x2266;y&#x2266;6.5, 0.0&#x2266;z&#x2266;1.0. The powder can additionally contain Li in an amount of 50 to 10000 ppm. The content of the aluminum nitride may be more than 0 mass % to less than 33 mass %.

(Oxy)nitride phosphor powder and method of producing same

An oxynitride phosphor powder is an &#x3b1;-SiAlON phosphor having a dominant wavelength of 565-577 nm and fluorescence intensity and external quantum efficiency that are high enough for practical use. The oxynitride phosphor powder comprises an &#x3b1;-SiAlON represented by the compositional formula: CaEuYbSiAlON(wherein 0.0&#x3c;x1&#x2266;2.0, 0.0000&#x3c;x2&#x2266;0.0100, 0.0000&#x3c;x3&#x2266;0.0100, 0.4&#x2266;x2/x3&#x2266;1.4, 1.0&#x2266;y&#x2266;4.0, 0.5&#x2266;z&#x2266;2.0).

Oxynitride phosphor powder

A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: CaEuSiAlON(in the Formula, x1, x2, y, and z are values such that 0&#x3c;x1&#x2266;3.40, 0.05&#x2266;x2&#x2266;0.20, 3.5&#x2266;y&#x2266;7.0, 0&#x2266;z&#x2266;1).

Wavelength conversion member and light-emitting device employing same

A thin-film piezoelectric resonator including a substrate (); a piezoelectric layer (), a piezoelectric resonator stack () with a top electrode () and bottom electrode (), and a cavity (). The piezoelectric resonator stack () has a vibration region () where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region () is fat the first vibration region, is fat the third vibration region, wherein fand fsatisfy a relationship of f&#x3c;f, and is a value between fand fat the second vibration region, said value increasing from the outer portion contacting the first vibration region to the inner portion contacting the third vibration region.

Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same

A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (); an insulating layer () formed on the semiconductor substrate () in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack () formed above the insulating layer and having a lower electrode (), a piezoelectric layer () and an upper electrode () in this order from the insulating layer side. An oscillation space () is formed corresponding to an oscillation region where the lower electrode () and the upper electrode () of the piezoelectric resonator stack () overlap each other in the thickness direction. The fixed charge density in the insulating layer () is 1&#xd7;10cmor less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300&#xb0; C. or higher is performed under non-oxygenated atmosphere.

Thin film piezoelectric resonator and method for manufacturing the same

Four frequency components (fto f) (where, ffff) are input into a port () of a first demultiplexing filter circuit (), and demultiplexed into low frequency components (fand f) and high frequency components (fand f), and input in a port () of a second demultiplexing filter circuit () and a port () of a third demultiplexing filter circuit (), respectively. The frequency components (fand f) are demultiplexed into the component (f) and the component (f) by the second demultiplexing filter circuit (), and output from a port () and a port (), respectively. The frequency components (fand f) are demultiplexed into the component (f) and the component (f) by the third demultiplexing filter circuit (), and output from a port () and a port (), respectively. The first demultiplexing filter circuit () comprises a low-pass filter () and a high-pass filter (), the second demultiplexing filter circuit () comprises a low-pass filter () and a combined filter () of a combination of a low-pass filter and a band elimination filter, and the third demultiplexing filter circuit () comprises a combined filter () of a combination of a high-pass filter and a band elimination filter and a high-pass filter (). These demultiplexing filter circuits are formed of a stacked structure.

Multiplexer

Dielectric ceramic composition for high frequency wave

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Ube, Japan

Kazuki Iwashita