Denso Corporation

Nippon Soken, Inc.

Toyota Jidosha Kabushiki Kaisha

Kazuki Fukatsu

Akimitsu Sugiura

Masamichi Shibata

Naoyoshi Takamatsu

Hiroya Tsuji

Fumiaki Aoki

Satoshi Hirose

Shota Kinoshita

Hiroyuki Sakakibara

Masayoshi Sugino

Hiromichi Kuno

Yuya Abe

Yoshitaka Tomita

A step-up transformer, an oscillator, and an ignition plug are comprised. The step-up transformer has a primary winding, a secondary winding, and a core. The ignition plug is connected to a first end of the secondary winding. A gap is formed in the core. The step up transformed is provided with a shielding part which is made of a conductive material and shields the magnetic flux leaking from the gap. A second end of the secondary winding is electrically connected to the shielding part.

Ignition device

In a high frequency plasma generation system, a magnetic resonance section is provided as a frequency multiplier section between a discharge circuit and a power booster circuit. The magnetic resonance section extracts from a fundamental wave of a predetermined frequency generated by a frequency generator higher harmonic components, which are multiplied waves of the predetermined frequency and as high as two or more integer times of the fundamental wave. A resonance frequency of the power booster circuit and a first resonance coil is set to be equal to the frequency of the multiplied wave and match to equal a resonance frequency of the discharge circuit and a second resonance coil of the magnetic resonance section when a discharge electrode and a ground electrode are in a predetermined pressure range.

High frequency plasma generation system and high frequency plasma ignition device using the same

A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.

Semiconductor power conversion device

Growing community of inventors

Anjo, Japan

Kazuki Fukatsu