Tokyo Ohka Kogyo Co., Ltd.

Kazuishi Tanno

Tsuyoshi Nakamura

JunYeob Lee

Takashi Nagamine

Naoto Motoike

Tomoyuki Hirano

Masatoshi Arai

Akiya Kawaue

Yoshitaka Komuro

Takayoshi Mori

Junichi Tsuchiya

Yoichi Hori

Masafumi Fujisaki

Tomohiro Oikawa

Eun Sol Jo

A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component including a polymeric compound containing a structural unit having an acid decomposable group, the amount of the structural unit having an acid decomposable group, based on the combined total of all structural units contained in the base component being 51 mol % to 59 mol %, and the structural unit having an acid decomposable group includes a structural unit represented by general formula (a1-1) shown below (in which R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Z represents a single bond or an alkyl group; and Cis a group represented by general formula (Cp-1) shown below). 

Resist composition and method of forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including at least one acid generator (B1) represented by general formula (b1) shown below, at least one acid generator (B2) represented by general formula (b2) shown below, and at least one acid generator (B3) represented by general formula (b3) shown below (wherein IV to Reach independently represents a cyclic group which may have a substituent, a chain alkyl group, or a chain alkenyl group; Yrepresents a single bond or a divalent linking group containing an oxygen atom; Mto Mrepresents a monovalent organic cation; n represents an integer of 1 to 4; m represents an integer of 0 to 4; provided that, when m is 0, the carbon atom adjacent to the sulfur atom within Rhas no fluorine atom bonded thereto).R&#x2014;Y&#x2014;(CF)&#x2014;SOM&#x2003;&#x2003;(b1)R&#x2014;(CH)&#x2014;SOM&#x2003;&#x2003;(b2)R&#x2014;COOM&#x2003;&#x2003;(b3)

A resist composition containing a compound (B1) represented by Formula (b1) in which Rrepresents a monovalent hydrocarbon group which has a steroid skeleton and 17 to 50 carbon atoms, Yand Yeach independently represent a divalent linking group having a hetero atom, Vrepresents a divalent linking group containing a cyclic aliphatic hydrocarbon group, Vrepresents an alkylene group, a fluorinated alkylene group, or a single bond, Rrepresents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms, m represents an integer of 1 or greater, and Mrepresents an m-valent organic cation 

Resist composition, method of forming resist pattern, and compound

A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid; and a compound represented by Formula (d1) in which Rand Reach independently represents &#x2014;COO, &#x2014;COOH, or a hydroxyl group, where at least one of Rand Rrepresents &#x2014;COO, R, R, and Reach independently represents a hydroxyl group or a halogen atom, Rto Reach independently represents an alkyl group, nbrepresents an integer of 0 to 4, nband nbeach independently represents an integer of 0 to 2, nbto nbeach independently represents an integer of 0 to 5, m represents 1 or 2, and q represents an integer of 0 to 3.) 

Resist composition, method of forming resist pattern, compound, and acid diffusion control agent

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, which includes a polymeric compound having at least two specific structural units.

Resin composition and method of forming resist pattern

A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.

Resist composition and resist pattern forming method

Using a resist composition which exhibits decreased solubility in an organic solvent upon exposure, patterning is conducted by a negative-tone development using a developing solution containing an organic solvent to form a first resist pattern on the substrate, wherein the first resist pattern is composed of a plurality of exposed portions. Then, a pattern reversing composition containing an organic solvent which does not dissolve the first resist pattern is applied to the substrate on which the first resist pattern has been formed, to form a pattern reversing film. Next, the first resist pattern is removed and patterning of the pattern reversing film is conducted by an alkali developing to form a reversed pattern in which the image of the first resist pattern is reversed.

Method of forming pattern

A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yarepresents a single bond or a divalent linking group; Xrepresents a sulfur atom or an oxygen atom; and Rarepresents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group. 

A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yarepresents a single bond or a divalent linking group; Xrepresents a sulfur atom or an oxygen atom; and Rarepresents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.

A resist composition contains a high-molecular weight compound which has a partial structure represented by a general formula (a0-r-1) and has a constituent unit represented by a general formula (a0-1). In the formula (a0-r-1), Yrepresents a divalent linking group; each of Rand Rrepresents a group having 0 to 20 carbon atoms, which is not a fluorine atom, and either Ror Rmay form a ring with Y; m represents an integer of 1 or more; and Mrepresents an m-valent organic cation. In the formula (a0-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yarepresents a single bond or a divalent linking group; Xrepresents a sulfur atom or an oxygen atom; and Rarepresents an optionally substituted cyclic group, chain alkyl group or chain alkenyl group.

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Kazuishi Tanno