Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Kazuichiro Itonaga

Keiji Tatani

Takuji Matsumoto

Shizunori Matsumoto

Yasushi Tateshita

Yu Oya

Machiko Horiike

Tetsuji Yamaguchi

Hiroyuki Mori

Fumihiko Koga

Hideshi Abe

Hideo Kido

Shinichiro Izawa

Kyohei Mizuta

Susumu Ooki

Norihiro Kubo

Yutaka Nishimura

Kai Yoshitsugu

Kenichi Chiba

Nobuyoshi Mori

Eigo Sano

Ikuo Yoshihara

Yuichi Takenaga

Suzunori Endo

Makoto Tsunoda

Joji Wada

Atsushi Morimura

Takayoshi Hasegawa

A light emitting element includes a first electrode, an organic layer formed on the first electrode and including a luminescent layer composed of an organic luminescent material and a second electrode formed on the organic layer, and further includes a light reflecting layer provided below the first electrode. Light emitted in the luminescent layer is resonated between the light reflecting layer and an interface of the second electrode and the organic layer, and a portion of the light is output from the second electrode.

Light emitting element, projection type display device, and planar light emitting device

To provide a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes: a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane; and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

Display device and electronic apparatus

There is provided a display device capable of decreasing a drive voltage. A display device includes: a first electrode provided for each of a plurality of light emitting elements arranged on a flat surface; at least two or more kinds of inorganic insulating layers which separate each of the light emitting elements and have different concentrations of hydroxy groups on surfaces of the layers; an organic light emitting layer provided on the first electrode and the two or more kinds of inorganic insulating layers; and a second electrode provided on the organic light emitting layer.

Display device, electronic device, and method of producing display device

There is provided a display device and an electronic apparatus that suppress leakage of a drive current between adjacent light emitting elements. A display device includes a plurality of light emitting elements having an organic light emitting layer sandwiched between a first electrode disposed for each of the light emitting elements and a second electrode in a lamination direction and arrayed on a plane, and an insulating layer disposed between the first electrodes. At least a part of a film thickness region in the insulating layer contains a positively charged inorganic nitride.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4&#xd7;n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Solid-state imaging device and electronic apparatus

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Solid-state imaging device and manufacturing method thereof

To obtain an imaging unit, a lens barrel, and a portable terminal which can effectively suppress spring-back of solid-state imaging elements, while facilitating height lowering thereof. An imaging unit includes: a solid-state imaging element; and an imaging lens for forming a subject image on a photoelectric conversion part of the solid-state imaging element. An imaging surface of the solid-state imaging element is curved in a manner that a peripheral side is inclined toward an object side relative to a screen center. The imaging lens constrains the solid-state imaging element to prevent a radius of curvature of the imaging surface from varying. Thus, field curvature, distortion aberration, and comatic aberration are appropriately corrected.

Imaging unit, lens barrel, and portable terminal

An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact section disposed on the gate electrode of the amplification transistor. The contact section overlaps the active region of the amplification transistor. The floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section. The width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor. The photoelectric conversion section includes a first type impurity, and the element isolation region includes a second type impurity having a conductivity opposite to the first type impurity.

Solid-state imaging device

A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.

Solid-state imaging device and camera including discrete trench isolation structure

Growing community of inventors

Tokyo, Japan

Kazuichiro Itonaga