Canon Kabushiki Kaisha

Kazuho Sone

Nobumasa Suzuki

A thin film forming apparatus comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and power supplying means for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and a sputter gas is supplied to a space formed between the target and the partition member and a reactive gas is supplied to a space formed between the substrate and the partition member.

Thin film forming apparatus and process for forming thin film using same

A film forming apparatus for forming a minute thin film at a high depositing rate, which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a gas supply means for supplying a sputtering gas for sputtering the target into a reaction chamber, and an electric power supply means for supplying an electric power for causing an electric discharge between the target and the substrate, wherein a partition member having a plurality of openings provided between the target and the substrate, and wherein means for supplying a reaction gas and a microwave are provided in a space between the partition member and the substrate.

Thin film forming apparatus and method of forming thin film of compound by using the same

To form a large-area thin film having in-plane uniform thickness and optical and electrical characteristics at a high deposition rate, a reactive sputtering apparatus is provided which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and a power supplying means for supplying a power for causing a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and wherein a supply port and an exhaust passage both for the sputter gas and a supply port and an exhaust passage both for the reactive gas are provided separately from each other such that the sputter gas is applied to and exhausted from a space between the target and the partition member and the reactive gas is applied to and exhausted from a space between the substrate and the partition member.

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Chiba, Japan

Kazuho Sone