Shinko Electric Industries Co., Ltd.

Nichia Corporation

Kazuhito Yumoto

Eiichiro Okahisa

Takuya Hashimoto

Shigeru Matsushita

Katsuya Nakazawa

Sumio Uehara

Suguru Kobayashi

Fumio Kuraishi

Shinichi Wakabayashi

Masao Nakazawa

Norio Wada

Toshihiko Shimada

Mamoru Hayashi

Norio Wakabayashi

A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

Semiconductor device, semiconductor device package, and manufacturing methods thereof

A semiconductor device includes: a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part; a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame; a plate jointed to the outside or inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame; a lead terminal inserted into the first through-hole and the second through-hole; a fixing member provided in the second through-hole and fixing the lead terminal; and a semiconductor element fixed to the inside part.

A method of manufacturing a semiconductor device includes, in this order: preparing a bottom plate having an upper surface and a lower surface, wherein the upper surface includes an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part, and wherein the lower surface of the bottom plate includes a reference part and a recess positioned above the reference part, at least a part of the recess being disposed directly below the outer peripheral part; joining a frame member to the outer peripheral part of the bottom plate, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the inside part of the bottom plate.

In a lead frame adapted to be used for a semiconductor device, a plurality of inner leads are made of a thin conductive material for easily forming a fine pattern of the inner leads. A plurality of outer leads are integrally formed with the respective inner leads. The outer leads are coated with metal layers to increase the thickness thereof, so that a desired strength of the outer leads is obtained. A semiconductor chip is electrically connected to the inner leads. The semiconductor chip and a part of the lead frame including the inner leads are hermetically sealed with a resin and, thus, a semiconductor device is obtained.

Semiconductor device having tab tape lead frame with reinforced outer

A tape useful for an automatic bonding process when manufacturing a high-frequency semiconductor device, the tape comprising an insulating flexible film, and circuit patterns consisting of copper or copper-alloy formed on the insulating film, each of the circuit patterns having inner and an outer lead portions. A tin or tin-lead plated film is formed on the pattern, and an intermediate plated film is formed on at least the outer lead portion as an underlayer. The intermediate plated film consists of a metal or metal alloy selected from nickel, cobalt, gold, silver, platinum, palladium, indium or rhodium.

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Nagano, Japan

Kazuhito Yumoto