Tokyo Electron Limited

Kazuhito Yamada

Hiroki Endo

Takashi Sato

A substrate processing apparatus includes a heater resistor; a digital filter configured to filter at least one of a detection voltage, which is a digital voltage value detected as a voltage applied to the heater resistor, or a detection current, which is detected as a voltage calculated from the heater resistor and a current flowing in the heater resistor and converted into a digital voltage value; and a controller configured to control a temperature of the heater resistor with the detection voltage and the detection current, at least one of the detection voltage or the detection current being filtered by the digital filter.

Substrate processing apparatus and parameter acquisition method

A substrate processing apparatus includes an AD converter configured to output digital values of a voltage applied to a heater resistor and a current flowing in the heater resistor; and a controller configured to control a temperature of the heater resistor by using a calculation voltage and a calculation current configured to calculate a resistance value of the heater resistor, which are obtained from an output result of the AD converter. The controller calculates at least one of the calculation voltage or the calculation current, based on a combination result of a digital signal obtained from the output result of the AD converter and a noise signal including a normal distribution noise.

Substrate processing apparatus and noise impact reducing method

A plasma processing apparatus includes a chamber; a substrate support having a lower electrode, an electrostatic chuck, and a heater; a radio frequency power supply; a DC power supply; a first controller; and a second controller. The first controller controls the radio frequency power supply to supply a pulsed radio frequency power to the lower electrode periodically with a cycle defined by a first frequency, and controls the DC power supply to apply a pulsed negative voltage to the edge ring periodically with the cycle. The second controller includes a heater controller that controls the power by obtaining a resistance value of the heater from sample values of a current and a voltage supplied to the heater. The first frequency is different from a second frequency that is a sampling frequency of the sample value of the current and the sample value of the voltage in the second controller.

Plasma processing apparatus and method

Plasma processing apparatus with heater and power frequency control

In substrate processing method, a change in a voltage, which is applied to a component provided in a substrate processing apparatus configured to process a substrate, is measured and a current flowing through the component is measured. A temperature of the component is obtained from a change in a resistance calculated based on the voltage and the current with reference to a conversion table in which a plurality of resistances is correlated with a plurality of temperatures. A determination of whether or not abnormality has occurred in a temperature of the substrate is made based on the change in the voltage, and processing of the substrate is stopped when it is determined that the abnormality has occurred.

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Miyagi, Japan

Kazuhito Yamada