Riken Corporation

Hitachi, Ltd.

Dai Nippon Printing Co., Ltd.

Sii Nanotechnology Inc.

Riken & Sii Nanotechnology Inc.

Kazuhito Tsukagoshi

Yoshinobu Aoyagi

Toshiaki Fujii

Masato Iyoki

Hiroshi Mizuta

Takashi Murakami

Satoshi Kawata

Masataka Kano

Bruce William Alphenaar

Takeo Minari

Masao Abe

Kunji Shigeto

Minuru Kawamura

Hisao Miyazaki

Alekber Yu Kasumov

Yuika Saito

Syunsuke Odaka

Yasushi Inoue

Provided is a novel electronic device that comprises graphite, graphene or the like. An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.

Electronic device and method for producing electronic device

A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics. The method includes: forming a hydrophobic/hydrophilic pattern substrate, in which a hydrophobic/hydrophilic pattern substrate is formed by using a hydrophobic substrate and by forming the hydrophilic region in pattern on the hydrophobic surface; forming a lyophilic functional layer, in which a lyophilic functional layer, made of an insulating functional material having the predetermined characteristics and having higher lyophilic properties to an organic solvent than that of the hydrophobic region, is formed on the hydrophilic region; forming an organic semiconductor layer, in which an organic semiconductor layer is formed on the lyophilic functional layer by selectively coating a coating solution for forming an organic semiconductor layer, which has an organic semiconductor material and an organic solvent, to the lyophilic functional layer.

Method for manufacturing organic transistor and organic transistor

A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same

In a manufacture of a probe for a scattering type near-field microscope, there is provided a method of coating, with a high reproducibility, uniform metal particles efficiently inducing a surface enhanced Raman scattering. It has been adapted such that, in the probe for the scattering type near-field microscope, one part or all of the probe due to an interaction of at least an evanescent field is coated by metal particles which don't mutually adhere and have a particle diameter of 10 nm or larger and 50 nm or smaller in radius of curvature.

Probe for near-field microscope, the method for manufacturing the probe and scanning probe microscope using the probe

A magnetoelectric device responsive to an applied magnetic field, e.g. for use as a reading head for data stored in magnetic storage media, comprises first and second ferromagnetic regions ( ) with a channel region ( ) between them, the ferromagnetic regions being configured so that charge carriers with a particular spin polarization which can pass through the first region, pass through the second region as a function of the relative orientations of magnetization of the ferromagnetic regions produced by the applied magnetic field such that the device exhibits a conductivity as a function of the strength of the applied field. The channel region ( ) includes a nanotube ( ) which may be formed of carbon, configured to provide a quasi-one-dimensional channel to cause charge carriers which pass through the first ferromagnetic region to maintain their spin polarization as they pass towards the second ferromagnetic region. In an alternative embodiment a deposited carbon layer ( ) is used in the channel region.

Magnetoelectric device

Growing community of inventors

Saitama, Japan

Kazuhito Tsukagoshi