Nec Corporation

National Institute for Materials Science

Kazuhito Tsukagoshi

Hidefumi Hiura

Toshihide Nabatame

Shinya Aikawa

Toyohiro Chikyo

Hisao Miyazaki

The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (), a drain electrode (), a semiconductor layer (), a gate electrode (), and an insulating layer (); wherein the semiconductor layer () contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer () is provided with an SiOlayer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiOlayer and the high-permittivity layers are used to control the threshold voltage.

Thin-film transistor and method for manufacturing same

Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface.

Method of manufacturing graphene substrate, and graphene substrate

The invention provides a manufacturing method of a graphene-on-insulator substrate which is mass productive, of high quality, and yet is directly usable for manufacture of semiconductor devices at a low manufacturing cost. According to the manufacturing method of a graphene substrate of the invention, a metal layer and a carbide layer are heated with the metal layer in contact with the carbide layer so that carbon in the carbide layer is dissolved into the metal layer, and then the metal layer and the carbide layer are cooled so that the carbon in the metal layer is segregated as graphene on the surface of the carbide layer.

Manufacturing method of graphene substrate and graphene substrate

Provided is a versatile method of determining the number of layers of a two-dimensional atomic layer thin film as compared with conventional methods. An electron beam is radiated to a two-dimensional thin film atomic structure having an unknown number of layers to determine the number of layers based on an intensity of reflected electrons or secondary electrons generated thereby. In particular, this method is effective for determining the number of layers of graphene.

Method for determining number of layers of two-dimensional thin film atomic structure and device for determining number of layers of two-dimensional thin film atomic structure

Growing community of inventors

Ibaraki, Japan

Kazuhito Tsukagoshi