Sokudo Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Screen Holdings Co., Ltd.

Kazuhito Shigemori

Shuichi Yasuda

Tadashi Miyagi

Masashi Kanaoka

Koji Kaneyama

Masakazu Sanada

Tsuyoshi Okumura

Tsuyoshi Mitsuhashi

Toru Asano

Tetsuya Hamada

Takashi Taguchi

Osamu Tamada

Tomohiro Goto

Yukio Toriyama

Yukihiko Inagaki

Hiroshi Kobayashi

Kenji Sugimoto

Minobu Matsunaga

Yoshihisa Yamada

Akihiro Hisai

Katsushi Yoshioka

Satoshi Yamamoto

Kaoru Aoki

Mitsumasa Kodama

Moritaka Yano

Takashi Nagao

Akiko Harumoto

Shuji Shibata

After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.

Substrate processing method for drying a substrate by discharging gas to liquid layer on the substrate while rotating the substrate

A method and apparatus capable of eliminating occurrence of a development failure when a DI water discharge nozzleis scanned to dry a substrate by spinning. A substrate is held in a horizontal posture by a spin chuck and rotated about a vertical axis by a rotation motor, and when an outlet of the nozzle is scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzle has started to move, only one dried core is produced in the vicinity of the center of the substrate, and thus production of not less than two dried cores in the vicinity of the center of the substrate is prevented. The dried region is spread all over the surface of the substrate.

Substrate processing apparatus

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Substrate processing method

A method capable of eliminating occurrence of a development failure when a DI water discharge nozzleis scanned to dry a substrate by spinning is provided. A substrate W is held in a horizontal posture by a spin chuckand rotated about a vertical axis by a rotation motor, and when an outlet of the nozzleis scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzlehas started to move, only one dried core is produced in the vicinity of the center of the substrate W, and thus production of not less than two dried cores in the vicinity of the center of the substrate W is prevented. The dried region is spread all over the surface of the substrate W.

Substrate processing method and substrate processing apparatus

After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.

Substrate processing apparatus and substrate processing method

A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes the steps of: forming a photosensitive film made of a photosensitive material on the substrate by said first processing unit before exposure processing by said exposure device. The method also includes applying washing processing to the substrate by said second processing unit after the formation of said photosensitive film by said first processing unit and before the exposure processing by said exposure device and transporting the substrate after the washing processing to said exposure device. The method further includes transporting the substrate from said exposure device and applying development processing by said third processing unit to the substrate transported after the exposure processing by said exposure device.

The transporting process from cleaning and drying processing of a substrate in a cleaning/drying processing unit in a cleaning/drying processing group to post-exposure bake (PEB) of the substrate in a thermal processing group for post-exposure bake in a cleaning/drying processing block is described below. First, after the substrate after exposure processing is subjected to the cleaning and drying processing in the cleaning/drying processing group, a sixth central robot takes out the substrate from the cleaning/drying processing group and carries that substrate into the thermal processing group for post-exposure bake in the cleaning/drying processing block.

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to an interface block. The interface block comprises a drying processing group including two drying processing units and an interface transport mechanism. After a substrate is subjected to exposure processing by the exposure device, the substrate is transported to the drying processing units in the drying processing group by the interface transport mechanism, where the substrate is subjected to cleaning and drying processings.

A substrate processing method comprises the step of subjecting a substrate to drying processing in at least one of a processing section and an interface, wherein the step of subjecting the substrate to the drying processing comprises the steps of: rotating the substrate at a first rotational speed around an axis perpendicular to the substrate, while holding the substrate horizontally, forming a liquid layer on the substrate in a state where the substrate is rotated at the first rotational speed, gradually and continuously increasing the rotational speed of the substrate to a second rotational speed after the formation of the liquid layer, and starting discharging a gas to the liquid layer on the substrate while the substrate is rotated at the second rotational speed.

After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.

Substrate processing apparatus with multi-speed drying having rinse liquid supplier that moves from center of rotated substrate to its periphery and stops temporarily so that a drying core can form

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a processing block for liquid immersion exposure processing, and an interface block. An exposure device is arranged adjacent to the interface block. The processing block for liquid immersion exposure processing comprises a coating processing group for resist cover film and a removal processing group for resist cover film. The resist cover film is formed in the processing block for liquid immersion exposure processing before the exposure processing. The resist cover film is removed in the processing block for liquid immersion exposure processing after the exposure processing.

A substrate processing apparatus comprises an indexer block, an edge-cleaning processing block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. In the exposure device, exposure processing is applied to a substrate by a liquid immersion method. In the edge-cleaning processing group in the edge-cleaning processing block, an edge of the substrate before exposure processing is cleaned.

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a drying/development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The drying/development processing block comprises a drying processing group. The interface block comprises an interface transport mechanism. A substrate is subjected to exposure processing by the exposure device, and subsequently transported to the drying processing group by the interface transport mechanism. The substrate is cleaned and dried by the drying processing group.

A substrate spinning step is executed for spinning a substrate in a plane parallel to a principal plane thereof at a first spinning speed of 100 rpm to 500 rpm. Then, a first applying step is executed for supplying a treating solution to a surface of the substrate by moving a nozzle from a position opposed to an edge of the substrate in a spin toward a position opposed to a spin center of the substrate while delivering the treating solution from the nozzle. Next, a second applying step is executed for supplying the treating solution to the surface of the substrate by stopping the nozzle at the position opposed to the spin center of the substrate in the spin while delivering the treating solution from the nozzle. Finally, a film thickness adjusting step is executed for stopping delivery of the treating solution from the nozzle, and spinning the substrate in the plane parallel to the principal plane thereof at a second spinning speed faster than the first spinning speed.

Growing community of inventors

Kyoto, Japan

Kazuhito Shigemori