Tokyo Electron Limited

Kazuhito Miyata

Nobuhiro Takahashi

Takehiko Orii

Shoi Suzuki

Yasuo Asada

Shunta Furutani

An etching method for performing side-etching of silicon germanium layers of a substrate having alternating silicon layers and the silicon germanium layers formed thereon is provided. The method includes modifying surfaces of residuals by supplying a plasmarized gas containing hydrogen to the residuals on exposed end surfaces of the silicon germanium layers, and performing side-etching on the silicon germanium layers by supplying a fluorine-containing gas to the silicon germanium layers.

Etching method and substrate processing system

A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Growing community of inventors

Nirasaki, Japan

Kazuhito Miyata