Hitachi, Ltd.

Opnext Japan, Inc.

Kazuhisa Uomi

Naoki Chinone

Masahiro Aoki

Takashi Kajimura

Tsukuru Ohtoshi

Shinji Sakano

Tomonobu Tsuchiya

Makoto Okai

Yuichi Ono

Tadashi Fukuzawa

Koji Ishida

Hiroaki Inoue

Tatemi Ido

Shinji Tsuji

Shinji Sasaki

Toshihiro Kawano

Shinichi Nakatsuka

Masaaki Komori

Misuzu Yoshizawa

Takayuki Tsutsui

Atsushi Nakamura

Hitoshi Nakamura

Hiroshi Sato

Atsushi Takai

Misuzu Sagawa

Akira Taike

Shin'ichi Nakatsuka

Kazuhiko Naoe

Masahiko Kondow

Akihiko Oka

Tsurugi Sudoh

Hideaki Matsueda

Makoto Takahashi

Toshiaki Tanaka

Shinji Nishimura

Satoshi Aoki

Kazunori Shinoda

Makoto Suzuki

Hirohisa Sano

Kunio Aiki

Kazuhiko Hosomi

Shigeo Yamashita

Minoru Fujita

Yasutoshi Kashiwada

Hiroyuki Kamiyama

Seiji Sumi

Yae Okuno

Akemi Yamanaka

A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlGaInNPAsSb(0&#x2266;a&#x2266;1, 0&#x2266;b&#x2266;1, 0&#x3c;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;z&#x3c;1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of a nitrogen-containing alloy semiconductor AlGaInNPAsSb(0&#x2266;a&#x2266;1, 0&#x2266;b&#x2266;1, 0&#x3c;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;z&#x3c;1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10Torr or higher.

Fabrication method for algainnpassb based devices

This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption amount is changed to control the amount of output light. Also, a plurality of p-side electrodes electrically separated from each other for applying an electrical signal to the active layer optical waveguides are arranged on optical axes of active layer optical waveguides. The length of optical waveguides to which the electrical signal is applied is changed by controlling the number of p-side electrodes to which the electrical signal is applied in accordance with temperature.

Semiconductor electro-absorption optical modulator, semiconductor electro-absorption optical modulator integrated laser, optical transmitter module and optical module

For achieving a transmission light source having different transmission properties or characteristics, i.e., the a parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.

Semiconductor electro-absorption optical modulator integrated light emission element light emission element module and optical transmission system

An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

Optical transmission device

A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

Semiconductor laser device, semiconductor laser array device and optical fiber transmission system

An optical transmission apparatus, where the variation of optical wavelength due to temperature change is slight, and at the same time, the stray capacitance of an external modulator is reduced, and an optical integrated structure having a light source and the external modulator is mounted in a mechanically stable manner. The external modulator modulates output light from a semiconductor laser. The semiconductor laser is a front-end emission semiconductor laser that emits unmodulated light. The semiconductor laser and the modulator are monolithically integrated as an integrated structure. Control electrodes of the semiconductor laser and the modulator formed on a waveguide of the integrated structure are junction-down mounted via solder material to a laser-driving electrode and optical-modulator driving electrode separately formed on an optical mounting substrate.

Optical transmission apparatus

A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0&lt;x&lt;1, 0.ltoreq.y&lt;1, 0.ltoreq.z&lt;1), and a method of making the semiconductor device and apparatus. For at least two semiconductor layers out of the plurality of semiconductor layers, a value of lattice strain of said at least two semiconductor layers is set at less than a critical strain at which misfit dislocations are generated at an interface between said two adjacent semiconductor layers. In a method for manufacturing a semiconductor device, Al, Ga, In, N, P, As and Sb as materials are prepared as materials for a semiconductor device, and a plurality of semiconductor layers are epitaxially grown by using said materials, including a layer of nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0&lt;x&lt;1, 0.ltoreq.y&lt;1, 0.ltoreq.z&lt;1) using nitrogen radical as nitrogen material, in a vacuum of substantially 10.sup.-2 Torr or higher.

Fabrication method for AlGaIn NPAsSb based devices

Disclosed is a vertical cavity surface emitting laser providing mirrors at least one of which has a high reflectivity to be obtained with a small number of pairs each comprising a semiconductor low-refractivity layer and a semiconductor high-refractivity layer, (1) in which GaAs is used for a substrate and Al, In and P are used as main elements for making the low-refractivity layers lattice-matching the GaAs substrate; (2) in which Ga, In, N and As are used as main elements of the high-refractivity layers; (3) in which GaAs is used for a substrate, Ga, In, N and As are used as main elements for making an active layer and the mirrors lattice-match the GaAs substrate.

Vertical cavity surface emitting laser, optical transmitter-receiver

A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.

Waveguide device

The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.

Semiconductor device having first and second semiconductor structures

Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.

Semiconductor optical integrated device and light receiver using said

A semiconductor optical switch and an optical switch array for use in an optical logic circuit, photonic switching, OEIC, etc., wherein a light amplifying means is provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, according to the arrangement of the present invention that a light amplifying means is provided in addition to the deflecting portion, no noise component is amplified and therefore the SN ratio is markedly increased.

Semiconductor optical switch and array of the same

A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy .DELTA.Ec of conduction band discontinuity is higher than the energy .DELTA.Ev of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy .DELTA.Ev of valence band discontinuity is higher than the energy .DELTA.Ec of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.

Surface emitting semiconductor laser

Growing community of inventors

Hachioji, Japan

Kazuhisa Uomi