Mitsubishi Denki Kabushiki Kaisha

Kazuhisa Takahashi

Shigeru Mitsui

Saburo Takamiya

Manabu Wataze

Nobuaki Kaneno

Tetsuo Shiba

Kenji Ikeda

Hideyo Higuchi

Takashi Ishii

Akihiro Kondo

A method of fabricating a semiconductor laser device includes disposing a lower cladding layer, a superlattice active layer, an upper cladding layer, and a contact layer in the named order on a substrate, forming resonator end surfaces, disposing, on the resonator end surfaces, films containing a material that disorders the semiconductor superlattice structure when diffused into the superlattice structure, and passing a current between the substrate and the contact layer to cause laser oscillations. The laser oscillations produce laser light that is absorbed at the resonator end surfaces. The resonator end surfaces are locally heated due to absorption of laser light whereby the disorder-causing material is diffused from the films into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonator end surfaces is thereby disordered to form window regions.

Method of fabricating semiconductor laser device using the light

A semiconductor light receiving device, including; a photo diode having a polyimide film as a surface protection film, and a hermetically sealed package including the photo diode in an ambient gas including oxygen.

Semiconductor light receiving device

A bubbling evaporator comprises: a vessel (11); a partition plate (11a) for dividing the vessel (11) into an upper chamber (11b) for temporarily storing carrier gas and a lower chamber (11c) for containing liquid (2); an inlet pipe (12 or 14) for making the carrier gas blow from the upper chamber (11b) into the liquid (2) in the lower chamber (11c) through the partition plate (11a) to bubble and evaporate the liquid (2); and an outlet pipe (13) for leading the evaporated vapor together with the carrier gas to the exterior of the vessel (11). Thus, backflow of the liquid (2) to the exterior of the vessel (11) can be prevented and stable pressure of the evaporated vapor can be obtained. A method of evaporating a liquid organic metal to be used in a vapor deposition process for manufacturing semiconductor devices and the like is also disclosed.

Method and apparatus for evaporating a liquid organic metal

A P type semiconductor layer is epitaxially grown on an N.sup.+ type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the substrate. The P type layer is formed into a mesa having a tilted surface to which the circumference of the PN junction is exposed. Then an N.sup.+ type diffusion layer is disposed on the tilted mesa surface to protect the PN junction.

Mesa type semiconductor device

An avalanche photodiode comprises a photo-electric conversion region made of a semiconductor having an energy band gap smaller than the photon energy and a carrier multiplying region made of a semiconductor that differs from the semiconductor of the photo-electric conversion region. The different semiconductors for imparting superior functions to the regions are used to improve the quantum efficiency in the photo-electric conversion region and to decrease noise in the carrier multiplying region.

Avalanche photodiode

A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.

Growing community of inventors

Itami, Japan

Kazuhisa Takahashi