Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Kazuhisa Matsuda

Kazuhiro Matsuo

Shinji Mori

Keiichi Sawa

Yuta Saito

Masayuki Tanaka

Atsushi Takahashi

Hiroyuki Yamashita

Kenichiro Toratani

Toshiyuki Sasaki

Mitsuhiro Omura

Shouji Honda

Hisashi Okuchi

Tsubasa Imamura

Tomo Hasegawa

Takaumi Morita

A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0&#xd7;10[EA/cm] or higher and 1.3&#xd7;10[EA/cm] or lower.

Semiconductor device and method of manufacturing the same

In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.

Semiconductor device and method of manufacturing same

A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.

Semiconductor memory device

In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

Semiconductor storage device comprising resistance change film and method of manufacturing the same

A semiconductor memory device includes a plurality of first interconnections extending in a first direction, and a second interconnection extending in a second direction different from the first direction. The device further includes a resistance change film provided between the plurality of first interconnections and the second interconnection, the resistance change film including (a) silicon and a semiconductor layer including one or more elements selected from among oxygen, carbon, nitrogen, phosphorus, boron, and germanium, or (b) a first layer containing the germanium and a second layer containing the silicon.

Semiconductor memory device and manufacturing method for same

A method for manufacturing a semiconductor device includes forming a resist film on a film to be processed. An upper portion of the film to be processed is processed using the resist film as a first mask. Tungsten or a tungsten compound is selectively formed on the resist film. A lower portion of the film to be processed is processed with a reducing gas using the tungsten or the tungsten compound as a second mask.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material is disclosed. The method includes etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas. In the second process, the second etch gas is used while a bias power is controlled to be equal to or greater than an etching threshold energy of the second film.

Method of manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first line pattern comprising a first film above an underlying layer, depositing a second film on a sidewall and a top surface of the first line pattern of the first film, etching the second film to eliminate the second film on the top surface of the first line pattern of the first film and leave the second film on the sidewall of the first line pattern of the first film, and removing the first line pattern to form a second line pattern of the second film above the underlying layer. The depositing the second film, etching the second film, and removing the first line pattern are sequentially performed within the same plasma processing device.

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Yokkaichi Mie, Japan

Kazuhisa Matsuda