Tosoh Corporation

Sagami Chemical Research Center

Sagami Chemical Research Institute

Kazuhisa Kawano

Noriaki Oshima

Taishi Furukawa

Hirokazu Chiba

Toshiki Yamamoto

Mayumi Takamori

Atsushi Maniwa

Tetsuo Shibutami

Kenichi Sekimoto

Kohei Iwanaga

Hiroyuki Oike

Kenichi Tada

Shuji Kumagai

The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein Rto R, R, Rand Rto Rrepresents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

This invention aims at providing (2,4-dimethylpentadienyl)-(ethylcyclopentadienyl)ruthenium which may contain its related structure compound, from which a ruthenium-containing thin film can be produced; a method of producing the same; a method of producing the ruthenium-containing thin film using the same; the ruthenium-containing thin film; and the like. The invention relates to producing the thin film using, as a precursor, (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound in an amount not more than 5% by weight, which can be obtained by separating the related structure compound from (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the related structure compound.

Ruthenium compound, method of producing the same, method of producing ruthenium-containing thin film using the same, and ruthenium-containing thin film

For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

Ruthenium complex mixture, method of producing the same, composition for film formation, ruthenium-containing film, and method of producing the same

An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, Rrepresents hydrogen atom or a lower alkyl group; Rrepresents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

Organometallic iridium compound, process for producing the same and process for preparing film

An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2):wherein Rrepresents hydrogen or a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded; Rrepresents a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

Organometallic iridium compound, process of producing the same, and process of producing thin film

Ruthenium complex, process for producing the same and process for producing thin film

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Kanagawa, Japan

Kazuhisa Kawano