Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kazuhisa Goto

Susumu Obata

Chiharu Ota

Takuma Suzuki

Sozo Kanie

A semiconductor device of embodiments includes a silicon carbide layer having a first face and a second face, a gate electrode, a gate insulating layer on the first face. The silicon carbide layer includes a first silicon carbide region of a first conductive type; a second silicon carbide region of a second conductive type disposed between the first silicon carbide region and the first face; a third silicon carbide region of a second conductive type between the first silicon carbide region and the first face; a fourth silicon carbide region; a fifth silicon carbide region; a sixth silicon carbide region of a second conductive type between the first silicon carbide region and the first face and between the second silicon carbide region and the third silicon carbide region; and a crystal defect. The crystal defect is in the sixth silicon carbide region.

Growing community of inventors

Yokohama Kanagawa, Japan

Kazuhisa Goto