Disco Corporation

Kazuhisa Arai

Hideyuki Sando

Toshiaki Takahashi

Shinichi Namioka

Masatoshi Nanjo

Kouichi Yajima

Masaya Takeuchi

Takashi Mori

Koichi Yajima

Akihito Kawai

Keiichi Kajiyama

Hideyuki Sandoh

Hiromi Hayashi

Masahiko Kitamura

Toru Takazawa

A resin sheet attaching method of attaching a resin sheet to a workpiece. The resin sheet attaching method includes a molecular weight reducing step of applying vacuum ultraviolet radiation to the front side of the resin sheet, thereby cutting an intermolecular bond in a surface region having a depth of tens of nanometers from the front side of the resin sheet to thereby reduce the molecular weight of the surface region and produce an adhesive force, and a resin sheet attaching step of attaching the front side of the resin sheet to the workpiece after performing the molecular weight reducing step.

Resin sheet attaching method

A manufacturing method for a photomask for wafer processing includes a step of forming a groove on the front side of a light shielding plate in an area where light is to be passed. The groove has a depth not reaching the back side of the light shielding plate. A uniting step applies a bonding agent capable of transmitting light to the front side of the light shielding plate after performing the groove forming step and next attaching a transparent plate through the bonding agent to the front side of the light shielding plate to thereby unite the light shielding plate and the transparent plate. A grinding step holds the transparent plate on a chuck table after performing the uniting step. The back side of the light shielding plate is ground until the groove is exposed to the back side of the light shielding plate.

Manufacturing method for photomask

A wafer is divided by setting the focal point of a laser beam inside the wafer at positions corresponding to division lines, thereby forming modified layers inside the wafer along the division lines. Each modified layer has a thickness ranging from the vicinity of the front side of the wafer to the vicinity of the back side of the wafer. An etching gas or an etching liquid is supplied to the wafer to erode the modified layers, thereby dividing the wafer into individual devices. The modified layers are not crushed, so fine particles are not generated in dividing the wafer. Accordingly, fine particles do not stick to the surface of each device and cause a reduction in quality. Further, since the modified layers are removed by etching, it is possible to prevent a reduction in die strength of each device due to the remainder of the modified layers.

Wafer dividing method

A grinding machine includes a holding table adapted to hold a workpiece, a grinding unit operative to grind the workpiece held on the holding piece, and a grinding unit transfer mechanism operative to shift the grinding unit in a direction coming close to or moving away from the workpiece. The grinding unit includes a porous pad having fine pores opposed to the workpiece, a gel-like slurry storing portion provided on the porous pad so as to store a gel-like slurry therein, and a water supply unit to supply water between the porous pad and the workpiece. The porous pad contains relatively larger superabrasives at least at an outer circumferential portion. The fine pores of the porous pad have a diameter greater than that of relatively small superabrasives contained in the gel-like slurry.

Grinding machine and method

A wafer processing method having a step of reducing the thickness of a wafer in only a device forming area where semiconductor chips are formed by grinding and etching the back side of the wafer to thereby form a recess on the back side of the wafer. At the same time, an annular projection is formed around the recess to thereby ensure the rigidity of the wafer. Accordingly, handling in shifting the wafer from the back side recess forming step to a subsequent step of forming a back side rewiring layer can be performed safely and easily.

Wafer processing method

A method of dividing a wafer having a plurality of areas, which are sectioned by the streets formed on the front surface in a lattice pattern and a plurality of devices, which are formed in the sectioned areas, along streets, the method comprising a first cutting step for holding the front surface of the wafer on a chuck table of a cutting machine and forming a first groove having a depth that is about half of the thickness of the wafer, along the streets from the rear surface of the wafer; a second cutting step for holding the rear surface of the wafer on a chuck table and forming a second groove which does not reach the first groove, along the streets from the front surface of the wafer; and a dividing step for breaking an uncut portion between the first groove and the second groove by exerting external force along the streets of the wafer, on which the first grooves and the second grooves have been formed.

An optical device manufacturing method including the steps of: forming a groove with a depth corresponding to a finish thickness of the heat sink in a heat sink material at a position corresponding to an associated one of the streets sectioning the plurality of optical devices; joining the optical device layer of the optical device wafer to the heat sink material via a joining metal layer; cutting and dividing the optical device wafer along the streets into individual optical devices; sticking a protection member to the rear surface of the substrate of the optical device wafer; and grinding the rear surface of the heat sink material to expose the grooves to the rear surface to thereby divide the heat sink material into heat sinks corresponding to associated individual optical devices.

Optical device manufacturing method

A lamination device manufacturing method for manufacturing a lamination device using a reinforced wafer formed with an annular reinforced portion, includes a wafer lamination step in which a rear surface of the reinforced wafer corresponding to the device area is faced to and joined to the front surface of an underlying wafer with corresponding streets aligned with each other, thus forming a lamination wafer; an electrode connection step in which a via-hole is formed at a position where an electrode is formed in each of the devices of the reinforced wafer constituting part of the lamination wafer, so as to reach a corresponding electrode formed in each of the devices of the underlying wafer, and the via-hole is filled with a conductive material to connect the electrodes; and a division step in which after the electrode connection step is executed, the lamination wafer is cut along the streets and divided into individual lamination devices.

Lamination device manufacturing method

A wafer processing method is capable of easily handling even a thinly formed wafer during the processing thereof. An annular protective member is bonded to an outer circumferential excess region on an outer surface of the wafer, on which devices are not formed, and a rear surface is ground with the outer surface left in the mentioned condition. Since the outer circumference of the wafer is reinforced with the annular protective member, the handling of the wafer becomes easy even after the wafer becomes thinner due to a grinding operation.

A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (), have their heads made uniform in height by causing the terminals () to project from a surface of a board () coated with a resist film, and applying a cutting tool () to the surface of the board () having the terminals project therefrom to carry out lathe turning for the heads of the terminals (), while having the terminal board held by a rotatable chuck table () and rotating the chuck table ().

Method of preparing terminal board

A flip chip bonder including a substrate holding mechanism and a chip die bonder for bonding a semiconductor chip having a plurality of electrodes projecting from its front surface to a substrate held on the substrate holding means. The flip chip bonder includes a chuck table, a semiconductor chip take-out area and an electrode cutting area, a cutting mechanism having a cutting tool for cutting the plurality of electrodes projecting from the front surface of the semiconductor chip held on the chuck table and arranged in the electrode cutting area to make them uniform in height, a semiconductor chip take-in mechanism, and a semiconductor chip conveying mechanism.

Flip chip bonder

A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 &#x3bc;m or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.

Method of manufacturing semiconductor wafer

A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Wafer support plate

A method of picking up a plurality of semiconductor chips formed by dividing a semiconductor wafer comprises the step of adhesively holding the plurality of semiconductor chips on an elastic adhesive pad which has innumerable pores in the surface and generates adhesion force when negative pressure is produced by the pores crushed by restoration force generated by elasticity and adhesion, and the step of picking up the semiconductor chips in a state of air in the pores being expanded by heating the elastic adhesive pad which adhesively holds the plurality of semiconductor chips at a predetermined temperature.

Semiconductor chip pick-up method

A method of grinding the rear side of a semiconductor wafer, the front side of which has bumps formed thereon, includes the steps of: preparing semiconductor wafers whose front surfaces have a plurality of circuits formed in their lattice patterns; coating the front side of a selected semiconductor wafer with a resist material to form a resist layer thereon; forming a plurality of holes in each section of the resist layer at which are to be formed bumps corresponding to the circuits by removing the resist; plating at the holes with a metal to form bumps; putting the semiconductor wafer on a selected chuck table with resist layer, which is formed on its front side, laid on the chuck table in a grinding machine; and grinding the rear side of the semiconductor wafer. The bumps are lower than the thickness of the resist layer, and therefore, they are short of reaching the front surface of the semiconductor wafer, and therefore, the semiconductor wafer can be protected from cracking, which otherwise would be caused by concentration of the stress to the bumps on the front side of the semiconductor wafer while grinding the rear side thereof.

Growing community of inventors

Tokyo, Japan

Kazuhisa Arai