Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Kazuhiro Yahata

Takashi Uno

Hiroshi Naitou

Tomohide Kamiyama

Naohiro Tsurumi

Hikaru Ikeda

Motoyoshi Iwata

Toshio Ishizaki

Hiroyuki Sakai

Taketo Kunihisa

Yukio Sakai

Tsuyoshi Tanaka

Daisuke Ueda

Yasuhiro Uemoto

Tadayoshi Nakatsuka

Hiroki Akashi

Yoshihisa Minami

Michiaki Tsuneoka

Hideki Yagita

Atsuhiko Kanda

Koji Hashimoto

Koji Takahashi

Takuya Ishii

Hiroshi Nakatsuka

Hiroshi Takahashi

Shuichi Nagai

Shinya Miyazaki

Seiichiro Tamai

Toshiyuki Okajima

Takeshi Azuma

Toshihide Nobusada

Yoshikuni Fujihashi

Yoshihito Kawakami

A switch circuit is configured of a first semiconductor element and a second semiconductor element connected in series, and receives a DC voltage of 100 V or more. The drive circuit causes the first semiconductor element or the second semiconductor element to perform a switching operation. The isolated power supply circuit converts a predetermined power supply voltage into an isolated first power supply voltage, and outputs the first power supply voltage to the drive circuit. The isolation signal converter converts a first signal of 6 MHz or more into an isolated first drive signal, and outputs the first drive signal to the drive circuit. The single substrate mounts the isolated power supply circuit and the isolation signal converter. Both the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.

Class-D power converter

The semiconductor module includes: a heat dissipation board including first to third wiring patterns; a first metal plate on the first wiring pattern, a second metal plate on the second wiring pattern, a first semiconductor chip and a first intermediate board which are on the first metal plate, a second semiconductor chip and a second intermediate board which are on the second metal plate. A first metal film on the first intermediate board is electrically connected to the first semiconductor chip and the second metal plate, and a second metal film on the second intermediate board is electrically connected to the second semiconductor chip and the third wiring pattern.

Semiconductor module, power semiconductor module, and power electronic equipment using the semiconductor module or the power semiconductor module

A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.

Semiconductor device

A resin package includes: a die pad having a main surface on which a semiconductor substrate and a matching circuit substrate is mounted; at least one lead terminal electrically connected to the semiconductor substrate and the matching circuit substrate; a thin plate fixed to at least one of the main surface of the die pad and a main surface of the at least one lead terminal; and molding resin which covers the semiconductor substrate, the matching circuit substrate, and the thin plate.

Resin package

A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.

Radio frequency amplifier circuit

A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.

Radio frequency power amplifier

A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.

Semiconductor package, method and mold for producing same, input and output terminals of semiconductor package

A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.

A radio frequency power amplifier includes a transistor and amplifies a radio frequency signal of a first frequency; an input matching circuit connected to an input terminal of the transistor; and an output matching circuit connected to an output terminal of the transistor. A reactance control circuit includes one end connected to the output terminal of the transistor, and the other end connected to an input terminal of an output matching circuit and a bias terminal. The reactance control circuit has a reactance which resonates at a second frequency with a parasitic capacitance of the transistor at the output terminal of the transistor, and the second frequency is identical or close to the first frequency.

A radio frequency amplifier circuit according to the present invention is for providing a radio frequency amplifier circuit with high output and high efficiency, and includes (i) a first harmonic processing circuit () and (ii) a second harmonic processing circuit () which are connected to an output terminal of transistors (), and a (iii) fundamental matching circuit () connected to a downstream of the first harmonic processing circuit () and the second harmonic processing circuit (). The radio frequency amplifier circuit includes plural first harmonic processing circuits () and plural second harmonic processing circuits ().

A variable-frequency oscillator, a semiconductor power amplifierfor amplifying the output of the variable-frequency oscillator; a radiatorfor radiating an electromagnetic wave for heating based on the output of the semiconductor power amplifier; a reflected wave monitoring circuitfor detecting a reflected wave of the electromagnetic wave for heating; and a controllerfor controlling the oscillation frequency of the variable-frequency oscillatorare provided. The controllerchanges the oscillation frequencies of the variable-frequency oscillatordiscontinuously, thereby getting a frequency-hopping spread-spectrum radiation done by the radiator. The electromagnetic wave radiated by the radiatorirradiates an objectto be heated (which is usually food) inside a heating chamber, thereby heating the object.

Spread-spectrum high-frequency heating device

A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.

Film bulk acoustic resonator, filter, and fabrication method thereof

A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.

Bulk acoustic resonator and filter element

A filter module includes a substrate and a plurality of resonators formed on the substrate and utilizing longitudinal vibration along the thickness of a piezoelectric layer. A plurality of external connection terminals are formed above or below the piezoelectric layer so as to be electrically connected to external circuits and also electrically connected to some of the plurality of resonators through a plurality of interconnects formed to the side of the piezoelectric layer to which the external connection terminals are formed.

Filter module using piezoelectric resonators, duplexer, communication device, and method for fabricating filter module

A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).

Growing community of inventors

Osaka, Japan

Kazuhiro Yahata