Ngk Spark Plug Company, Limited

Kazuhiro Urashima

Shinji Yuri

Hiroshi Yamamoto

Masaki Muramatsu

Manabu Sato

Takeshi Mitsuoka

Motohiko Sato

Toshitake Seki

Makoto Origuchi

Masakazu Watanabe

Hajime Saiki

Jun Otsuka

Hiroshi Sumi

Yo Tajima

Yasuhiro Sugimoto

Hiroko Nakayama

Mitsuo Shiraishi

Kenji Nakanishi

Eiji Miura

Shigeru Iwase

Tatsuharu Ikawa

Kohki Ogawa

A method for manufacturing a wiring board including, as steps executed in written order: a sub-core accommodation step of accommodating the ceramic sub-core in the sub-core accommodation space through the first-major-surface-side opening of the sub-core accommodation space; and a film formation and charging step of forming a lowest resin insulating layer of the first-major-surface-side wiring laminate by sticking a resin material to the core body and the ceramic sub-core from the first major surface side, and forming a groove-filling portion that is continuous with the lowest resin insulating layer by charging the resin material into a gap between the core body and the ceramic sub-core.

Method for manufacturing a wiring board

An intermediate board has a board core formed by a main core body and a sub-core portion. The main core body has a plate-like shape and includes an open sub-core housing portion in which the sub-core portion is housed. A first terminal array of the board core has an area that overlaps an orthogonal projection of the sub-core portion. The latter incorporates a laminated ceramic capacitor formed by first and second conductor layers with a ceramic (dielectric) layer therebetween. The first layer is connected to first and second side terminals of a first type while the second layer is connected to first and second side terminals of a second type. The housing portion has an inner edge which, in cross section, is of a quadrate shape, and a radius portion is formed at each corner having a dimension of between 0.1 and 2 mm.

Wiring board and capacitor to be built into wiring board

A cutting insertis made of an aluminum oxide-based composite sintered body constituted by a ternary ceramic material including aluminum oxide, silicon carbide, and a sialon. The sialon in the aluminum oxide-based composite sintered body is Si&#x2014;Al&#x2014;O&#x2014;N as defined by JCPDS No. 32-0026 in X-ray diffraction analysis.

Aluminum oxide-based composite sintered body and cutting insert

A circuit board ('&#x2033;) comprising: a board core () having a main core surface () and a rear core surface (); a ceramic capacitor (&#x2033;&#x2033;&#x2033;) having a main capacitor surface () and a rear capacitor surface (), having a structure in which a first inner electrode layer () and a second inner electrode layer () are alternately stacked with a ceramic dielectric layer () interposed therebetween, and having a plurality of capacitor function units () being electrically independent from each other, the ceramic capacitor (&#x2033;&#x2033;&#x2033;) being buried in the board core () in a state where the main core surface () and the main capacitor surface () are directed in a same direction; and a buildup layer () having a structure in which an interlayer insulating layer () and a conductor layer () are alternately stacked on the main core surface () and the main capacitor surface () and having a semiconductor integrated circuit device mounting region () for mounting a semiconductor integrated circuit device () having a plurality of processor cores () on a surface () of the buildup layer (), wherein the plurality of capacitor function units () are capable of being electrically connected to the plurality of processor cores (), respectively.

Ceramic capacitor

A wiring board comprising: a board core () having a core main surface () and a core reverse surface (); a capacitor (A,B,C,D,E,F,G,H,J,'&#x2033;&#x2033;) having a capacitor main surface () and a capacitor reverse surface () and having a structure in which first inner electrode layers () and second inner electrode layers () are alternately laminated and arranged via a dielectric layer (), the capacitor (A,B,C,D,E,F,G,H,J,&#x2032;&#x2033;&#x2033;) being accommodated in the board core () in a state in which the core main surface () and the capacitor main surface () are oriented on a same side; and a wiring laminated portion () having a structure in which interlayer insulating layers () and conductor layers () are alternately laminated on the core main surface () and the capacitor main surface (), wherein an inductor () or a resistor () is formed on or in the capacitor (A,B,C,D,E,F,G,H,J,&#x2032;&#x2033;&#x2033;).

Wiring board and capacitor

A wiring board comprising: a core board including a core body and a ceramic sub-core which is accommodated in a sub-core accommodation space that is a through-hole that communicates with major surfaces of the core body or a recess having an opening in a first major surface of the core body; and wiring laminates each formed by resin insulating layers and conductor layers laminated on each of major surfaces of the core board, wherein: a groove-filling portion which fills a gap between the core body and the ceramic sub-core is integral with a lowest resin insulating layer of the first-major-surface-side wiring laminate; and via conductors that are connected to respective conductor patterns formed on a first major surface of the ceramic sub-core penetrate through the lowest resin insulating layer.

Wiring board and manufacturing method of wiring board

A wiring board includes a substrate core, ceramic capacitors and a built-up layer. The substrate core has a housing opening portion therein which opens at a core main surface. The ceramic capacitors are accommodated in the housing opening portion and oriented such that the core main surface and a capacitor main surface of each capacitor face the same way. The built-up layer includes semiconductor integrated circuit element mounting areas at various locations on a surface thereof. In the substrate core, each ceramic capacitor is respectively disposed in an area corresponding to each semiconductor integrated circuit element mounting area.

Wiring board construction including embedded ceramic capacitors(s)

A wiring substrate comprised of a substrate main body made of glass-ceramic, a pad formed on a surface of the substrate main body and a conductor pin provided in an upright position on the pad. The pad is comprised of a ceramic that is the same as the ceramic constituting the glass-ceramic, Fe converted into FeOand Cu. The FeOcomprises 1 to 28 parts by weight with respect to 100 parts by weight of the Cu.

Wiring substrate and bonding pad composition

An intermediate substrate comprising: an intermediate substrate body containing an insulating material, and having a first face to be mounted with an semiconductor element and a second face opposing to said first face; and a semiconductor element mounting area including a plurality of first face terminals arranged on said first face, and being surrounded by an outermost periphery of said plurality of first face terminals, wherein a center of said semiconductor element mounting area is eccentric with respect to a center of said first face.

Intermediate substrate, intermediate substrate with semiconductor element, substrate with intermediate substrate, and structure having semiconductor element, intermediate substrate and substrate

A ceramic sintered body comprising from 90 to 99.8% by volume of cordierite and from 0.2 to 10% by volume of mullite based on 100% by weight of a total sum of the contents of the cordierite and the mullite, and having a density of 2.48 g/cmor more.

Ceramic sintered body and process for producing the same

A sintered alumina ceramic obtained by preparing a raw material powder mixture containing alumina and a Group 3A metal oxide or a Group 3A metal compound which provides a Group 3A metal oxide on heating, and firing said raw material powder mixture. The sintered ceramic contains alumina particles having an average particle diameter of 4.0 &mgr;m or smaller. In the sintered ceramic, the total content of alkali metal elements, alkaline earth metal elements, Si, and Ti as converted to oxides accounts for 0.1 mol or less with respect to 100 mols of alumina, the total peak intensity for the principal peaks for ReAlO and Re Al O (Re: Group 3A metal) amounts to from 1 to 75% of the intensity of the principal peak of alumina as measured by X-ray diffraction, and the relative density is 99.0% or higher with respect to the theoretical density.

Sintered alumina ceramic, method for producing the same, and cutting tool

To provide a silicon nitride based sintered material having high strength and high hardness and superior in reliability, silicon nitride sintered material has a composition mainly composed of silicon nitride or Si--Al--O--N, and further comprises 0.5 to 3 wt % of a Mg component, calculated as MgO, and 3 to 10 wt % of a Yb component, calculated as Yb.sub.2 O.sub.3. As a secondary crystal phase, the material contains one or more of Yb.sub.2 Si.sub.3 N.sub.4 O.sub.3, Yb.sub.2 Si.sub.3 N.sub.2 O.sub.5 and Yb.sub.4 Si.sub.2 N.sub.2 O.sub.7. Silicon nitride or Si--Al--O--N comprises 20-50 vol % of needle-like crystals of the entire material.

Silicon nitride based sintered material and method for producing same

A silicon nitride sintered product comprises, in % by weight, 1 to 10% Mg, calculated as MgO, 1 to 10% Zr, calculated as ZrO.sub.2, 0.1 to 2.0% of at least one of Al, calculated as Al.sub.2 O.sub.3, Li, calculated as Li.sub.2 O, and Na, calculated as Na.sub.2 O, and the remainder being Si.sub.3 N.sub.4 and unavoidable impurities.

Growing community of inventors

Konan, Japan

Kazuhiro Urashima