Renesas Electronics Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Kazuhiro Takimoto

Yutaka Akiyama

Kenji Sasaki

Shunichi Hiraki

Yoshikazu Usuki

Toshiyuki Shou

Hidemitsu Mori

To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same. A semiconductor device includes a first conductivity type semiconductor substrate, second conductivity type first wellsanddisposed on a surface layer of the semiconductor substratewith a predetermined interval between them, a first conductivity type second welldisposed between the first wellsandon the surface layer of the semiconductor substrateand having an impurity concentration higher than that of the semiconductor substrate, a first conductivity type third wellat least disposed below the second wellin the semiconductor substrateand having an impurity concentration higher than that of the semiconductor substrateand lower than that of the second well, and a first conductivity type fourth wellat least disposed below the third wellin the semiconductor substrateand having an impurity concentration higher than that of the semiconductor substrateand lower than that of the second well

Method of fabricating semiconductor device with a high breakdown voltage between neighboring wells

A semiconductor device which has a protective film having a high blocking capacity against contaminating ions and a high shielding effect against an external electric field. The protective film is formed on a surface of the semiconductor device. The protective film consists essentially of an amorphous or polycrystalline silicon carbide which contains at least one element selected from the group consisting of hydrogen, nitrogen, oxygen and a halogen.

Process of producing a semiconductor device

Growing community of inventors

Kawasaki, Japan

Kazuhiro Takimoto