Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Nec Corporation

Kazuhiro Tada

Kei Yamamoto

Shigeru Hasegawa

Yasushi Nakayama

Takeshi Oi

Takayoshi Miki

Kenji Mimura

Shiori Idaka

Hiroshi Yoshida

Kenichi Hayashi

Takashi Nishimura

Takeshi Tanaka

Toru Kimura

Masao Akiyoshi

Kozo Harada

Masaaki Taruya

Hisashi Kawafuji

Dai Nakajima

Seiji Oka

Yukio Nakashima

Taketoshi Shikano

Hiromi Ito

Yasunari Hino

Hiroki Shiota

Seiki Hiramatsu

Masaki Goto

Hiroyuki Yoshihara

Tomohiro Kobayashi

Hiroyuki Ozaki

Yo Tanaka

Motoki Masaki

Dai Yoshii

Atsuko Fujino

Xiaohong Yin

Tatsuyuki Takeshita

Hideki Komori

Hideki Takigawa

Nobuhito Funakoshi

Tomohisa Yamane

Mariko Takahara

Yurie Nakamura

Shin Uegaki

Tatsuya Kitagawa

The power module includes: a heat spreader having a plate shape and having heat conducting property; a semiconductor element at least thermally connected to a one-side surface of the heat spreader; a highly-heat-dissipating insulation adhesive sheet having a plate shape and having a one-side surface thermally connected to an other-side surface of the heat spreader; a metal plate having a one-side surface thermally connected to an other-side surface of the highly-heat-dissipating insulation adhesive sheet; and a sealing resin member sealing the semiconductor element, the heat spreader, the highly-heat-dissipating insulation adhesive sheet, and the metal plate in a state where an other-side surface of the metal plate is exposed, wherein the highly-heat-dissipating insulation adhesive sheet is a complex obtained by impregnating, with a resin, a porous ceramic sintered body in which ceramic particles have a gap and have been integrally sintered.

Power module including highly-heat-dissipating insulation adhesive sheet

The semiconductor device includes: a semiconductor element including a body portion formed in a plate shape, a protection film provided at an outer periphery on one surface of the body portion, and a metal thin film provided adjacently to an inner side of the protection film on the one surface of the body portion; a metal member joined to a surface of the metal thin film on a side opposite to the body portion, by solder; and a mold resin sealing the semiconductor element and the metal member, wherein the surface of the metal thin film on the side opposite to the body portion has, on at least a part of an outer periphery thereof, a projection portion projecting from the surface of the metal thin film, and the solder is not provided on an outer peripheral side from a top of the projection portion.

Semiconductor device and manufacturing method therefor

A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

Semiconductor device

A method for manufacturing, by a transfer mold method, a power module equipped with a heat conductive insulating sheet in which an inorganic filler including secondary aggregated particles formed by aggregation of primary particles of scaly boron nitride is dispersed in a thermosetting resin, where curing of an uncured or semi-cured heat conductive insulating sheet during transfer molding is advanced under specific conditions. The method for manufacturing a power module equipped with a heat conductive insulating sheet has excellent thermal conductivity and electric insulation ability.

Heat conductive insulating sheet, power module, and manufacturing method thereof

An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a base plate having a first major plane and a second major plane opposite to each other, and having a plurality of fins held upright on the first major plane and a bulge portion formed on the first major plane to encircle the plurality of fins, an insulation layer formed on the second major plane of the base plate, a circuit pattern fixed to the insulation layer, a semiconductor element connected to the circuit pattern, and a sealing resin sealing the insulation layer, the circuit pattern, and the semiconductor element. The bulge portion formed on the first major plane continuously encircles the plurality of fins, the bulge portion has a widthwise margin on an outer peripheral edge of the base plate, and the sealing resin covers an outer peripheral side face of the bulge portion and the widthwise margin.

Semiconductor device having a bulge portion and manufacturing method therefor

A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

Power semiconductor module

A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

A semiconductor device includes a metal substrate including a metal base plate, an insulating sheet located on the metal base plate, and a wiring pattern located on the insulating sheet, and a semiconductor element located on the metal substrate. The semiconductor element is sealed with a molding resin. The molding resin extends to side surfaces of the metal substrate. On the side surfaces of the metal substrate, the insulating sheet and the wiring pattern are not exposed from the molding resin, whereas the metal base plate includes a projecting portion exposed from the molding resin.

Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 &#x3bc;m or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 &#x3bc;m or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

Heat conductive sheet and method for producing same, and powder module

A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.

Semiconductor device and method for producing the same

An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.

Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer

A semiconductor memory circuit which can operate with reduced value of peak currents. The memory circuit includes two or more memory cell arrays each having a plurality of memory cells and a peripheral circuit for achieving selective access operation is provided for each array. At least a timing signal and its delayed timing signals are generated in response to a control signal. Both of the timing signal and the delayed timing signal are used to enable the peripheral circuits at different timing.

Memory circuit having a plurality of cell arrays

Growing community of inventors

Tokyo, Japan

Kazuhiro Tada