Kabushiki Kaisha Toshiba

Sony Corporation

Hitachi, Ltd.

Mitsubishi Gas Chemical Company, Inc.

Koninklijke Philips Corporation N.v.

University of California

Nikon Corporation

Shin-Etsu Chemical Co., Ltd.

Sony Interactive Entertainment Inc.

The Furukawa Electric Co., Ltd.

Hoya Corporation

Hitachi Automotive Systems, Ltd.

Ihi Corporation

Agc Inc.

Mitsubishi Hitachi Power Systems, Ltd.

Kazuhiro Suzuki

Hideyuki Funaki

Risako Ueno

Honam Kwon

Hiroto Honda

Mitsuyoshi Kobayashi

Koichi Ishii

Keita Sasaki

Akira Miyashita

Kazuhiko Itaya

Ikuo Fujiwara

Masaki Atsuta

Hitoshi Yagi

Morio Gaku

Yoshinori Iida

Yutaka Suzuki

Tetsuya Matsui

Masahiro Koike

Kan Yasui

Hiroshi Yamada

Go Kawata

Yuko Kizu

Kenzo Urabe

Hideya Suzuki

Tatsuo Shimizu

Kenji Maeda

Hiroshi Yoshioka

Takashi Enomoto

Toshiya Satoh

Hiroshi Hozoji

Wiebe De Haan

Mariko Shimizu

Michihiko Nishigaki

Toshiaki Ishii

Hiroshi Shirasu

Yujiro Kaneko

Hiroshi Kuwahara

Toshiaki Morita

Yutaka Onozuka

Isao Sugaya

Kinobu Osakabe

Yoshio Kawai

Takashi Hirao

Masamichi Suzuki

Yoshiaki Moriya

Kazuaki Okamoto

Kensuke Nagai

Kyoko Kojima

Liwei Lin

Katsunori Azuma

Hiroyuki Ishige

Masako Ogata

Mitsuru Odakura

Kojirou Kodaira

Kenji Kumasaka

Toru Shimizu

Tsuneo Furuya

Yoshinobu Yamamoto

Machiko Ito

Tosiaki Sugisaki

Arata Nakagoshi

Yukio Kizaki

Eiichi Nishina

Yuki Nobusa

Katsumi Isaka

Kenji Tayama

Yuuji Adachi

Miki Yamazoe

Kazuyuki Nakamichi

Emi Akabane

Yusaku Himono

Shohei Konno

Takafumi Taniguchi

Yoshiaki Kito

Yasuhiro Oshima

Masato Miyahara

Yohichi Ogawa

Osamu Otsuka

Toshiaki Kanada

Hiroyuki Matsushima

Masahiro Yoshihashi

Yuji Masubuchi

Daisuke Yuki

Yoshihiro Tsurumi

Yoshinori Ooba

Shigeru Asanuma

Shingo Urata

Noboru Naito

Hiroshi Tamate

Keisuke Ichikawa

Toru Notomi

Satsuki Miyagawa

Tomonari Hayashi

Kei Inagawa

Soichiro Watanabe

Koichi Shukuzaki

Toshikazu Sasa

Hiroyasu Owada

According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Light detector, light detection system, lidar device, and vehicle

According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.

Light detector, light detection system, LIDAR device, and moving body

In a semiconductor device using a wide bandgap semiconductor material having a bandgap larger than that of silicon, reliability of the semiconductor device is improved by achieving a structure in which electric field strength in the vicinity of an outer end portion of a semiconductor chip is relaxed. A side surface of the semiconductor chip CHPis formed of a region Rincluding a first corner, a region Rincluding a second corner, and a region Rinterposed between the region Rand the region R. At this point, in a case of defining a minimum film thickness of a high electric field-resistant sealing member MR in the region Ras tand defining a maximum film thickness of the high electric field-resistant sealing member MR in the region Ras t, a relation of t&#x2264;1.5&#xd7;tis satisfied.

Semiconductor device, manufacturing method for semiconductor device, semiconductor module, and power conversion device

A fairing installed in a bypass duct defined between an outer casing and an inner casing around an axis of a turbofan engine to make compressed air bypass a low pressure compressor is comprised of a fore section elongated aftward from the inner casing at an inlet of the bypass duct and running along an internal periphery of the outer casing; and an aft section elongated aftward in succession to the fore section and curved in a direction getting away from the internal periphery so as to increase an area of a flow path toward an aft end of the aft section, the whole of the aft section being curved.

Bypass duct fairing for low bypass ratio turbofan engine and turbofan engine therewith

Provided is an inexpensive and highly reliable resin sealed-type onboard electronic control device is mounted in a vehicle such as an engine control unit and a control unit for automatic transmission, which have a heat dissipation structure for dissipating heat generated from an electronic component such as a semiconductor element. The onboard control device includes a circuit board, a member provided to face the circuit board, a heat generating electronic component mounted between the circuit board and the member, a heat dissipating material provided between the heat generating electronic component and the member, and a sealing resin to seal the circuit board and the heat generating electronic component. And a space between the member and the circuit board is at least a part of a range where the heat dissipating material is not provided, and is narrower than a range where the heat dissipating material is provided.

Onboard control device

A photodetector according to an embodiment includes: a first semiconductor layer of a first conductivity type, including a first surface and a second surface that is opposite to the first surface; a second semiconductor layer of a second conductivity type, disposed on the second surface; and at least one photo-sensing device including a region in the first semiconductor layer, a region in the second semiconductor layer, and a first electrode disposed in a first region of the first surface.

Photodetector and LIDAR system including the photodetector

There is provided a process for producing molten glass, which is capable of easily increasing the HO content in glass melt with excessive generation of convection of the glass melt being reduced. One mode of the process for producing molten glass according to the present invention is characterized to include a material melting step for melting a raw glass material in a melting furnace to prepare glass melt; a water-molecules supply step for supplying a water-molecules supply gas into the glass melt flowing from an upstream end of the melting furnace toward a downstream end of the melting furnace; and a refining step for degassing, under a reduced pressure atmosphere, the glass melt flowing out of the downstream end; wherein a position where the water-molecules supply gas is supplied in the water-molecules supply step includes a first position and a second position from downstream to upstream in a flowing direction of the glass melt in this order; the first position is a position away from both of the upstream end and the downstream end; and the second position is a position closer to the upstream end than a center of a distance between the upstream end and the first position in the flowing direction of the glass melt.

Method for manufacturing molten glass, method for manufacturing glass product, and device for manufacturing molten glass

In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.

Semiconductor device and power conversion device using same

In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.

Semiconductor device, method for manufacturing same, and semiconductor module

It is made possible for a user to set whether to download data used by a program without waiting for the acceptance of a download permission or download the data in response to the acceptance of the download permission via a screen that allows for making the setting for a plurality of programs. An input/output control section () accepts, from the user, a setting as to whether to select an automatic download state or a manual download state via a screen that allows for doing so for a plurality of programs. If the setting of selecting the automatic download state is accepted, an item management section () downloads the data from a server without waiting for the acceptance of the download permission from the user when a predetermined condition is satisfied. If the setting of selecting the manual download state is accepted, the item management section () downloads the data from the server in response to the acceptance of the download permission from the user when the predetermined condition is satisfied.

Information processing system, information processing device, information processing method, program and information storage medium for setting download permissions or settings

A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Liquid crystal optical device, solid state imaging device, portable information terminal, and display device

Substrates are aligned and then bonded to each other. A substrate bonding apparatus includes a deformer that deforms at least a first one of two substrates that are to be bonded to each other in order to correct misalignment between the two substrates, a holder that holds the deformed first substrate in the deformed state achieved by the deformer, a transporter that transports the holder from a position at which the deformed first substrate is held by the holder while the first substrate remains deformed, and a bonder that bonds the first substrate that has been transported by the transporter to the second substrate. In the above-described substrate bonding apparatus, while the first substrate is not held by the holder, the deformer may deform the holder from a first state to a second state that is more deformed than the first state, and while the first substrate is held by the holder, the deformer may reduce the amount of the deformation of the holder to less than the amount of the deformation of the second state to deform the first substrate.

Substrate bonding apparatus, substrate holding apparatus, substrate bonding method, substrate holding method, multilayered semiconductor device, and multilayered substrate

A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.

Imaging device, portable information terminal, and display device

An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.

Imaging apparatus

A radiation detection apparatus according to an embodiment includes: a scintillator; a photon detection device array including a plurality of cells each being a photon detection device with an avalanche photodiode configured to detect visible radiation photons emitted from the scintillator and a resistor disposed along a part of a periphery of an active region of the avalanche photodiode; and a reflector configured to reflect a visible radiation photon and disposed in a region that does not include the active regions and the resistors of the cells, on a face including the active regions.

Radiation detection apparatus

Growing community of inventors

Tokyo, Japan

Kazuhiro Suzuki