Nec Corporation

Renesas Electronics Corporation

Aio Core Co., Ltd.

Kazuhiro Shiba

Shigeru Kobayashi

Kazuhiko Kurata

Tatsuya Sasaki

Shigeru Koumoto

Mitsuru Kurihara

Takeshi Nakata

Masayoshi Sumino

Koji Kudo

Junichi Fujikata

Shinya Sudo

Kikuo Makita

Koichi Naniwae

Sawaki Watanabe

Provided is an optical module having high efficiency in optical coupling to a functional element on a substrate. An optical module includes: a first optical waveguide disposed parallel to a substrate; a condensing mirror configured to reflect and condense light propagated in the first optical waveguide toward the substrate; a second optical waveguide formed in a tapered shape narrowed toward the substrate, the second optical waveguide guiding the light reflected by the condensing mirror to the vicinity of the surface of the substrate; and an optical function unit disposed on the substrate such that the light emitted from the second optical waveguide is incident on the optical function unit.

Optical module

To provide an opto-electric module that can be cooled efficiently. An opto-electric module comprises: an opto-electric hybrid device provided with an electronic circuit and an optical circuit driven by the electronic circuit, the opto-electric hybrid device having a first surface and a second surface on an opposite side from the first surface, such that an electrical input and output unit with respect to the electronic circuit and an optical input and output unit with respect to the optical circuit are disposed on the first surface; an interface substrate which is disposed near the first surface of the opto-electric hybrid device and which is provided with an electrical interconnect coupled to the electrical input and output unit, an optical interconnect coupled to the optical input and output unit, an electrical interface which is connected to the electrical interconnect and also connectible to an external electrical interconnect, and an optical interface which is connected to the optical interconnect and also connectible to an external optical interconnect; and a heat-dissipating member disposed in contact with the second surface of the opto-electric hybrid device.

Opto-electric module

In an optical receiver which is compatible with a plurality of signal channels, it is difficult to receive signals properly because a variation in receiving light sensitivity of a photoelectric conversion unit occurs between a plurality of signal channels, therefore, an optical receiver according to an exemplary aspect of the invention includes an optical processing circuit processing input signal light to have been input and outputting a plurality of output signal light beams; and a plurality of photoelectric conversion means for receiving the plurality of output signal light beams respectively and outputting electric signals, wherein the photoelectric conversion means includes an avalanche photodiode which can control a multiplication factor of an output current as the electric signal by means of an applied voltage; and the avalanche photodiode operates with a driving voltage by which the output currents in the plurality of photoelectric conversion means become almost the same.

Optical receiver and method for controlling optical receiver, optical receiver, method for controlling optical receiver, and method for receiving light

The Si waveguideincludes a first conductivity-type Si layerand an intrinsic Si layer, and a second conductivity-type light-absorption layeris partially formed on an area thereof. During operation, a reverse bias is applied between the first conductivity-type Si layerand the light-absorption layer. Since the light-absorption layerhas a conductivity type, it is not depleted when a voltage is applied, but the intrinsic Si layerforming the Si waveguideis depleted. Therefore, it is possible to reduce a CR time constant. Furthermore, since the intrinsic Si layercan be formed on the first conductivity-type Si layerin a continuous manner, it is possible to reduce lattice defects. As a result, it is possible to suppress the dark current generated in the light-receiving element.

Semiconductor light-receiving element

According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

Electrode structure, semiconductor element, and methods of manufacturing the same

Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving devicewith a mesa structure wherein a light-absorbing layer, an avalanche multiplication layerand an electric-field relaxation layerare formed on a semiconductor substrate. The light-absorbing layer, avalanche multiplication layerand electric-field relaxation layerexposed in the side wall of the mesa structure are protected by an SiNfilm or an SiONfilm. The hydrogen concentration in the side wall surface of the electric-field relaxation layeris set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer

Method for manufacturing a semiconductor light-receiving device

A light receiving elementhas a semiconductor substrate; a first mesaprovided over the semiconductor substrate, and having an active region and a first electrode (p-side electrode) provided over the active region; a second mesaprovided over the semiconductor substrate, and having a semiconductor layer and a second electrode (n-side electrode) provided over the semiconductor layer; and a third mesaprovided over the semiconductor substrate, and having a semiconductor layer, wherein the third mesais arranged so as to surround the first mesa

Semiconductor optical element

Input ports () formed from fundamental mode waveguides are provided at one end of a multimode waveguide (). Further, an output port () formed from a fundamental mode waveguide is provided at the other end of the multimode waveguide (). The multimode waveguide () has a width wider than those of the input ports () and the output port (), and provides modes including multimode to the waveguide. The multimode waveguide () is embedded with a buried layer (). Both of the end faces of the multimode waveguide () are made to be planes equivalent to a (100) plane or planes inclined from these planes. In a case of inclined planes, the planes are made to be planes inclined to a direction that the waveguide region spreads toward a stacked direction of the semiconductor layers.

Growing community of inventors

Tokyo, Japan

Kazuhiro Shiba