Mitsubishi Gas Chemical Company, Inc.

Mitsubishi Electric Corporation

Kazuhiro Otsu

Hideki Kobayashi

Kazuyuki Ohya

Junichiro Ishikawa

Tatsuya Sasaki

Takahiro Seki

Yasushi Nakayama

Hiroyuki Takagi

Yoshiko Tamada

Yoshinori Mabuchi

Masukazu Hirata

Takeshi Nobukuni

Yoshitaka Naka

Noriyuki Kimura

Naohiko Mitomi

Kazuhiro Ohya

Masaki Fujihira

A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.

Short-circuit protection circuit for self-arc-extinguishing type semiconductor element

A gate driving circuit for an insulated gate-type power semiconductor element includes an Nch MOSFET which turns on the insulated gate-type power semiconductor element, a Pch MOSFET which turns off the insulated gate-type power semiconductor element, a control circuit which turns on the Nch MOSFET by applying a positive voltage to the gate electrode of the Nch MOSFET, and which turns on the Pch MOSFET by applying a negative voltage to the gate electrode of the Pch MOSFET, and a power supply which applies a negative voltage to the drain electrode of the Pch MOSFET and to a negative-side electrode of the control circuit, which applies a positive voltage to the drain electrode of the Nch MOSFET, and which applies to a positive-side electrode of the control circuit a positive voltage whose absolute value is larger than absolute value of the positive voltage applied to the drain electrode of the Nch MOSFET.

Gate driving circuit for insulated gate-type power semiconductor element

A separating machine for separating a thinned semiconductor substrate from a holding substrate after a semiconductor substrate is bonded to the holding substrate with a thermoplastic resin and a back surface treatment including the thinning of the semiconductor substrate is carried out. The separating machine includes a pair of vacuum adsorption heads for adsorbing the holding substrate-bonded thinned semiconductor substrate from the holding substrate side and from the thinned semiconductor substrate side, which is opposite to the holding substrate side. At least one of the vacuum adsorption heads has a moving means for moving the vacuum adsorption head to adsorb and hold the bonded substrates in a predetermined position together with the other vacuum adsorption head. At least one of the vacuum adsorption heads, has a system for moving the vacuum adsorption head in a single swing direction for separating the bonded substrates after the above adsorption and holding operation is performed.

Separating machine for thinned semiconductor substrate and separation method

Process for the production of electric part

A method of supporting a semiconductor substrate according to the present invention can be applied to the step of processing the semiconductor substrate at a high temperature of 350&deg; C. or higher, and there is provided a process for the production of electronic parts, comprising the steps of forming semiconductor circuits on one surface (surface A) of a semiconductor substrate (SEC) having a thickness of at least 0.2 mm, supporting the semiconductor substrate on a supporting substrate (BP) by bonding (AS) of said surface A to the supporting substrate (BP), grinding and polishing the exposed other surface (surface B) of the semiconductor substrate (SEC) by a physical method, a chemical method or a method of combination of these methods, to decrease the thickness of the semiconductor substrate (SEC) to less than 0.2 mm, forming semiconductor circuits in the polished surface, to obtain an electronic-circuits-possessing semiconductor substrate (PSE), and peeling (PS) the electronic-circuits-possessing semiconductor substrate (PSE) off from the supporting substrate (BP), wherein the step of grinding and polishing the surface B or the step of forming electronic parts in the surface B includes the step of processing the surface B at a high temperature of at least 350&deg; C., and the bonding (AS) uses a heat-resistant thermoplastic (RF).

Process for the production of electronic parts

An oxygen-absorbing composition comprising (a) a powdery or particulate crosslinked polymer containing carbon-carbon unsaturated bonds and having a high heat resistance and being easy to grind due to crosslinked structure, and (b) a catalyst. The oxygen-absorbing composition can be used in a dry state and can be utilized in an oxygen absorbent package. An oxygen-absorbing multilayered body can be formed from the oxygen-absorbing composition. A sheet or a film oxygen-absorbing multilayered body can be made from the oxygen-absorbing composition.

Oxygen-absorbing component, oxygen absorbent package and oxygen-absorbing multilayered body containing same

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Tokyo, Japan

Kazuhiro Otsu